Datasheet > BZD27C3V9P-G2

BZD27C3V9P-G2

更新时间： 2024-02-21 10:20:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	171K
描述
DIODE 3.9 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, PLASTIC, SMF, 2 PIN, Voltage Regulator Diode

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技术参数
数据手册

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BZD27C3V9P-G2 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-219AB
包装说明：	PLASTIC, SMF, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.66
Base Number Matches：	1

BZD27C3V9P-G2 数据手册

BZD27C3V6P to BZD27C200P

Vishay Semiconductors

VISHAY

Typical Characteristics (T_amb= 25 °C unless otherwise specified)

10.00

1.00

0.10

160

140

120

100

Typ. V

Max. V

0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6

25 50 75 100 125 150 175 200

– Zener Voltage ( V )

17411

17414

– Forward Voltage ( V )

Znom

Figure 1. Forward Current vs. Forward Voltage

Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage

10000

RSM

C5V1P

C6V8P

C12P

C18P

(%)

100

10 µs

1000 µ s

1000

100

C27P

1.0

C51P

C200P

0.5

0.0

1.5

2.0

2.5

3.0

– Reverse Voltage (V)

17415

17412

Figure 2. Typ. Diode Capacitance vs. Reverse Voltage

Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition

3.0

tie point temperature

2.5

2.0

1.5

ambient temperature

1.0

0.5

0.0

100 125 150

17413

amb

– Ambient Temperature ( qC )

Figure 3. Power Dissipation vs. Ambient Temperature

www.vishay.com

Document Number 85810

Rev. 4, 16-Sep-03

1 2 345 6

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