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BZD27C15P-E3-08 PDF预览

BZD27C15P-E3-08

更新时间: 2024-02-01 15:05:44
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
8页 128K
描述
Zener Diode, 15V V(Z), 6.12%, 0.8W, Silicon, Unidirectional, DO-219AB, SMF, 2 PIN

BZD27C15P-E3-08 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:DO-219AB包装说明:R-PDSO-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:10 weeks风险等级:0.77
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-219ABJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.8 W
参考标准:AEC-Q101标称参考电压:15 V
表面贴装:YES技术:ZENER
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
最大电压容差:6.12%工作测试电流:50 mA
Base Number Matches:1

BZD27C15P-E3-08 数据手册

 浏览型号BZD27C15P-E3-08的Datasheet PDF文件第1页浏览型号BZD27C15P-E3-08的Datasheet PDF文件第2页浏览型号BZD27C15P-E3-08的Datasheet PDF文件第3页浏览型号BZD27C15P-E3-08的Datasheet PDF文件第5页浏览型号BZD27C15P-E3-08的Datasheet PDF文件第6页浏览型号BZD27C15P-E3-08的Datasheet PDF文件第7页 
BZD27C Series  
Vishay Semiconductors  
www.vishay.com  
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
10  
IRSM  
(%)  
t1 = 10 µs  
Max. VF  
t2 = 1000 µs  
100  
Typ. VF  
90  
1
50  
10  
t
0.1  
t1  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
t2  
17415  
17411  
VF - Forward Voltage (V)  
Fig. 1 - Forward Current vs. Forward Voltage  
Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition  
14  
10 000  
Chart valid for TJ = 175 °C; TA = 25 °C, and a duty  
cycle of D = 0.5  
Duty cycle D  
12  
C5V1P  
C18P  
C6V8P  
C12P  
tp  
T
tp  
D =  
T
10  
8
T
J max. - TA  
1000  
100  
PZSM  
=
D x (Rth - Zth (tp)) + Zth (tp)  
6
P (RthJL  
)
Typ. PZSM = f (tp)  
4
C27P  
C51P  
2
P (RthJA  
)
C200P  
0.5  
0
10  
0
1.0  
1.5  
2.0  
2.5  
3.0  
0.001 0.01  
0.1  
1
10  
100  
1000  
17412  
VR - Reverse Voltage (V)  
22987  
tp Pulse Width (s)  
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage  
Fig. 5 - Typical Repetitive Peak Surge Power  
1000  
3.0  
Typ. Zth = f (tp)  
RthJL = 30K/W  
2.5  
100  
10  
2.0  
1.5  
RthJA 3 mm x 3 mm pad  
RthJL  
1.0  
0.5  
0
R
thJA = 180K/W  
1
0
25 50 75 100 125 150 175  
0.001 0.01  
0.1  
1
10  
100  
1000  
22774  
Tamb - Ambient Temperature (°C)  
22988  
tp Pulse Width (s)  
Fig. 3 - Power Dissipation vs. Ambient Temperature  
Fig. 6 - Typical Thermal Impedance vs. Time  
Rev. 1.5, 10-Oct-17  
Document Number: 85153  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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