BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Sillicon planar zener diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering: 260 °C/10 s
at terminals
17249
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: DO-219AB (SMF)
Weight: approx. 15 mg
Packaging codes/options:
GS18/10 k per 13 " reel (8 mm tape), 10 k/box
GS08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
TL = 80 °C
Symbol
Ptot
Value
2.3
Unit
W
Power dissipation
0.8 1)
300
TA = 25 °C
Ptot
W
100 µs square pulse 2)
10/1000 μs waveform (BZD27-C7V5P to BZD27-C100P) 2)
10/1000 μs waveform (BZD27-C110P to BZD27-C200P) 2)
PZSM
PRSM
PRSM
W
W
W
Non-repetitive peak pulse power
dissipation
150
100
Notes
1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
2) TJ = 25 °C prior to surge
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
RthJA
Value
180
Unit
K/W
Thermal resistance junction to ambient air 1)
Thermal resistance junction to lead
RthJL
Tj
30
150
K/W
°C
Maximum junction temperature
Storage temperature range
TS
- 55 to + 150
°C
Note
1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
Document Number 85810
Rev. 2.0, 23-Mar-10
www.vishay.com
1
For technical support, please contact: DiodesSSP@vishay.com