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BZD27-C43T/R PDF预览

BZD27-C43T/R

更新时间: 2024-01-09 17:46:25
品牌 Logo 应用领域
恩智浦 - NXP 局域网二极管电视
页数 文件大小 规格书
14页 90K
描述
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

BZD27-C43T/R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.78
最小击穿电压:40 V外壳连接:ISOLATED
最大钳位电压:60.7 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-LELF-R2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:300 W
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.8 W认证状态:Not Qualified
最大反向电流:5 µA表面贴装:YES
技术:AVALANCHE端子面层:TIN
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIED

BZD27-C43T/R 数据手册

 浏览型号BZD27-C43T/R的Datasheet PDF文件第3页浏览型号BZD27-C43T/R的Datasheet PDF文件第4页浏览型号BZD27-C43T/R的Datasheet PDF文件第5页浏览型号BZD27-C43T/R的Datasheet PDF文件第7页浏览型号BZD27-C43T/R的Datasheet PDF文件第8页浏览型号BZD27-C43T/R的Datasheet PDF文件第9页 
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZD27 series  
REVERSE  
CURRENT at  
STAND-OFF  
VOLTAGE  
REVERSE  
BREAKDOWN  
VOLTAGE  
TEST  
CURREN  
T
TEMPERATURE  
COEFFICIENT  
CLAMPING  
VOLTAGE  
TYPE  
NUMBER  
V(BR)R (V)  
at Itest  
at IRSM  
(A)  
note 1  
SZ (%/K) at Itest  
V(CL)R (V)  
MAX.  
IR (µA)  
Itest  
(mA)  
at VR  
(V)  
MIN.  
MIN.  
MAX.  
MAX.  
168  
188  
208  
228  
251  
280  
310  
340  
370  
400  
440  
480  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
5
5
2
2
2
2
2
2
2
2
2
2
249  
276  
305  
336  
380  
419  
459  
498  
537  
603  
655  
707  
0.60  
0.54  
0.50  
0.45  
0.40  
0.36  
0.33  
0.30  
0.28  
0.25  
0.23  
0.21  
5
5
5
5
5
5
5
5
5
5
5
5
150  
160  
180  
200  
220  
240  
270  
300  
330  
360  
390  
430  
BZD27-C180  
BZD27-C200  
BZD27-C220  
BZD27-C240  
BZD27-C270  
BZD27-C300  
BZD27-C330  
BZD27-C360  
BZD27-C390  
BZD27-C430  
BZD27-C470  
BZD27-C510  
Note  
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.8.  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-tp  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
thermal resistance from junction to tie-point  
BZD27-C3V6 to -C6V8  
55  
30  
K/W  
K/W  
BZD27-C7V5 to -C510  
Rth j-a  
thermal resistance from junction to ambient  
BZD27-C3V6 to -C6V8  
note 1  
175  
150  
K/W  
K/W  
BZD27-C7V5 to -C510  
Note  
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.7.  
For more information please refer to the “General Part of associated Handbook”.  
1996 Jun 10  
6

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