BYV26E

更新时间： 2024-02-06 23:46:44

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
2页	56K
描述
GLASS PASSIVATED FAST EFFICIENT RECTIFIER

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BYV26E 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.82
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	2.2 V	JESD-609代码：	e0
最大非重复峰值正向电流：	30 A	元件数量：	1
最高工作温度：	175 °C	最大输出电流：	1 A
最大重复峰值反向电压：	1400 V	最大反向恢复时间：	0.15 µs
子类别：	Rectifier Diodes	表面贴装：	NO
端子面层：	Tin/Lead (Sn80Pb20)	Base Number Matches：	1

BYV26E 数据手册

BYV26D AND BYV26E

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Reverse Voltage - 800 to 1000 Volts

Forward Current - 1.0 Ampere

FEATURES

♦ High temperature metallurgically bonded construction

♦ Glass passivated cavity-free junction

♦ Superfast recovery times for high efficiency

♦ Low forward voltage, high current capability

♦ Capable of meeting environmental standards of

MIL-S-19500

DO-204AP

0.034 (0.86)

0.028 (0.71)

1.0 (25.4)

DIA.

MIN.

♦ Hermetically sealed package

♦ Low Leakage

♦ High surge capability

0.240 (6.1)

MAX.

♦ Specified reverse surge capability

♦ High temperature soldering guaranteed:

350°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

0.150 (3.8)

0.100 (2.5)

DIA.

1.0 (25.4)

MECHANICAL DATA

MIN.

Case: JEDEC DO-204AP solid glass body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight: 0.02 ounce, 0.56 gram

Brazed-lead assembly is covered by Patent No. 3,930,306

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

V_RRM

V_RMS

V_DC

BYV26D

800

BYV26E

1000

700

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Volts

560

Maximum DC blocking voltage

800

1000

1100

Minimum avalanche breakdown voltage at 100µA

V_BR

900

Maximum average forward rectified current

0.375" (9.5mm) lead length _{(SEE FIG. 1)}

I_(AV)

I_FSM

V_F

1.0

Amp

Amps

Volts

Peak forward surge current 10ms single half

sine-wave superimposed on rated load

30.0

Maximum instantaneous forward voltage at 1.0A

T_J=25°C

T_J=175°C

2.50

1.30

Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=165°C

5.0

I_R

t_rr

150.0

75.0

10.0

15.0

µA

Maximum reverse recovery time _{(NOTE 1)}

Non repetitive peak reverse energy

Typical junction capacitance _{(NOTE 3)}

E_RSM

C_J

(NOTE 2)

Typical thermal resistance _{(NOTE 4)}

R_ΘJA

R_ΘJL

70.0

16.0

°C/W

°C

(NOTE 5)

Operating junction and storage temperature range

T_J, T_STG

-65 to +175

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

(2) Peak reverse energy measured at I_R=400mA, T_J=T_Jmax. on inductive load, t=20µs

(3) Measured at 1.0 MH_Zand applied reverse voltage of 4.0 Volts

(4) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads

(5) Thermal resistance from junction to lead at 0.375” (9.5mm) lead length with both leads attached to heatsink

4/98

中文翻译

下载PDF

与BYV26E相关器件

型号	品牌	获取价格	描述	数据表
BYV26E/4	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AP, ROHS COMPLIANT
BYV26EAGP	GULFSEMI	获取价格	SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 1000V CURRENT: 1.5A
BYV26EAMO	PHILIPS	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM),
BYV26E-E3/54	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AP, ROHS COMPLIANT PACKAGE-2
BYV26EGP	TAYCHIPST	获取价格	SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER
BYV26EGP	VISHAY	获取价格	Glass Passivated Ultrafast Rectifier
BYV26EGP	GULFSEMI	获取价格	SINTERED GLASS JUNCTION FAST SWITCHING PLASTI
BYV26EGP	SUNMATE	获取价格	1A plug-in fast recovery diode V DO-15 series
BYV26EGP	RECTRON	获取价格	Reverse Voltage Vr : 1000 V;Forward Current Io : 1000 mA;Max Surge Current : 30 A;Forward
BYV26EGP/100	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

与BYV26E相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

4
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

3
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

3
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

5

产品中心

服务支持

精选活动

关于我们

帮助中心

BYV26E

BYV26E 技术参数

BYV26E 数据手册

与BYV26E相关器件

与BYV26E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BYV26E

BYV26E 技术参数

BYV26E 数据手册

与BYV26E相关器件

与BYV26E相关文章

您还可以找

您在本页遇到什么问题？