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BYD67A PDF预览

BYD67A

更新时间: 2024-10-01 06:44:51
品牌 Logo 应用领域
EIC 二极管
页数 文件大小 规格书
2页 104K
描述
RIPPLE BOCKING DIODE

BYD67A 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.76Base Number Matches:1

BYD67A 数据手册

 浏览型号BYD67A的Datasheet PDF文件第2页 
TH97/10561QM  
TW00/17276EM  
IATF 0060636  
SGS TH07/1033  
RIPPLE BOCKING DIODE  
BYD67A  
SMA (DO-214AC)  
PRV : 300 Volts  
Io : 1.2 Amperes  
1.1 ± 0.3  
FEATURES :  
0.2 ± 0.07  
* Glass passivated junction chip  
* High maximum operating temperature  
* Low leakage current  
1.2 ± 0.2  
2.1 ± 0.2  
2.6 ± 0.15  
* Excellent stability  
* Smallest surface mount rectifier outline  
* Pb / RoHS Free  
2.0 ± 0.2  
MECHANICAL DATA :  
* Case : SMA Molded plastic  
Dimensions in millimeters  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Lead Formed for Surface Mount  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.067 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified  
RATING  
VALUE  
300  
SYMBOL  
VRRM  
UNIT  
V
Maximum Repetitive Peak Reverse Voltage  
Maximum Continuous Reverse Voltage  
Maximum Average Forward Current  
VR  
300  
1.2 (1)  
0.4 (2)  
V
IF(AV)  
A
IFSM  
IFRM  
VF  
5.0  
Maximum Non-Repetitive Peak Forward Surge Current (Note 3)  
Maximum Repetitive Peak Forward Current at Ttp = 85 °C  
Maximum Forward Voltage at IF = 1.0 A, TJ = 25 °C  
A
A
11  
2.3  
1.0  
V
Maximum Reverse Current at VR = VRRMmax  
TJ = 25 °C  
IR  
μA  
TJ = 165 °C  
IR(H)  
Trr  
100  
μA  
150  
Maximum Reverse Recovery Time (Note 4)  
Thermal Resistance from Junction to Tie-Point  
ns  
30  
Rth j-tp  
Rth j-a  
TJ  
K / W  
K / W  
°C  
150  
Thermal Resistance from Junction to Ambient (Note 5)  
Junction Temperature Range  
- 65 to + 175  
- 65 to + 175  
TSTG  
Storage Temperature Range  
°C  
Notes :  
(1) Ttp = 85 °C; see Fig. 1; averaged over any 20 ms period; see Fig. 2  
(2) Tamb = 60 °C; PCB mounting ; see Fig. 3; averaged over any 20 ms period; see also Fig.2  
(3) t=10ms half sine wave; Tj = Tjmax prior to surge; VR = VRRMmax  
(4) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.  
(5) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 μm.  
Page 1 of 2  
Rev. 00 : February 13, 2008  

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