Datasheet > BY399P/60-E3

BY399P/60-E3

更新时间： 2022-12-01 23:16:32

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	280K
描述
DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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BY399P/60-E3 数据手册

BY396P thru BY399P

Vishay General Semiconductor

Electrical Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Test condition

Symbols BY396P BY397P BY398P BY399P

Units

Maximum instantaneous forward

voltage

at 3.0 A

V_F

1.25

Maximum DC reverse current at

rated DC blocking voltage

T_A= 25 °C

T_A= 100 C

I_R

500

µA

Maximum reverse recovery time

at I_F= 10 mA, I_R= 10 mA,

I_rr= 1.0 mA

t_rr

500

Maximum forward recovery time

Typical junction capacitance

at 100 mA, di/dt = 50 A/µs

at 4.0 V, 1 MHz

t_fr

1.0

µs

C_J

Thermal Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Symbols BY396P BY397P BY398P BY399P

R_θJA22

Units

°C/W

Typical thermal resistance ⁽¹⁾

Notes:

(1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length with both leads to heat sink

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise noted)

4.0

3.0

2.0

200

100

TA = 50 °C

10 ms Single Half Sine-Wave

At Rated Load

Resistive or

Inductive Load

1.0

0.375” (9.5 mm) Lead Length

100

120

140

100

Number of Cycles at 50 Hz

Ambient Temperature (°C)

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88542

10-Oct-05

123 4

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