Datasheet > BY399P/58

BY399P/58

更新时间： 2022-12-01 19:34:25

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	280K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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BY399P/58 数据手册

BY396P thru BY399P

Vishay General Semiconductor

100

TJ = 25 °C

f = 1.0 MHz

V^sig= 50mVp-p

TJ = 25 °C

Pulse Width = 300 µs

1% Duty Cycle

0.1

0.01

2.0

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

100

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

TJ = 100 °C

TJ = 50 °C

0.1

T^J= 25 °C

0.01

100

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics

Package outline dimensions in inches (millimeters)

DO-201AD

1.0 (25.4)

Min.

0.210 (5.3)

0.190 (4.8)

Dia.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

Min.

0.052 (1.32)

0.048 (1.22)

Dia.

Document Number 88542

10-Oct-05

www.vishay.com

1 234

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