Datasheet > BUF634AIDDAR

BUF634AIDDAR

更新时间： 2022-06-24 15:42:59

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
41页	3585K
描述
BUF634A 36-V, 210-MHz, 250-mA Output, High-Speed Buffer

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BUF634AIDDAR 数据手册

BUF634A

www.ti.com

SBOS948D – FEBRUARY 2019 – REVISED SEPTEMBER 2020

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted).⁽¹⁾

MIN

MAX

40 (±20)

Vs ± 0.5

Continuous

125

UNIT

V_S= (V+) – (V–)

V_IN

Supply voltage

Input voltage

Output short-circuit (to ground)

Operating ambient temperature

Junction temperature

Storage temperature

T_A

–40

–65

°C

T_J

150

T_stg

150

(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

7.2 ESD Ratings

VALUE

±3000

±1000

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

V_(ESD)

Electrostatic discharge

Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted).

MIN

±2.25

–40

NOM

±15

MAX

±18

UNIT

V_S= (V+) – (V–)

T_A

Supply voltage

Ambient temperature

125⁽¹⁾

°C

(1) Limited by R_ΘJAand T_J,Maxfor safe operation. See the Output Current section.

7.4 Thermal Information

BUF634A

THERMAL METRIC⁽¹⁾

D (SOIC)

8 PINS

122.9

55.2

DRB (VSON)

8 PINS

50.5

DDA (HSOIC)

8 PINS

41.3

UNIT

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_θJC(top)

R_θJB

57.1

68.4

23.6

17.0

Ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

12.1

1.5

4.6

Ψ_JB

67.2

23.6

17.0

R_θJC(bot)

6.9

5.3

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

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