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BTS6133D PDF预览

BTS6133D

更新时间: 2024-01-16 16:30:13
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关
页数 文件大小 规格书
15页 257K
描述
Smart Highside Power Switch

BTS6133D 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252
包装说明:TO-252, SMSIP5H,.37,50TB针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:1.13
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数:1接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSSO-G4JESD-609代码:e3
长度:6.5 mm湿度敏感等级:3
功能数量:1端子数量:4
输出电流流向:SINK最大输出电流:7.5 A
标称输出峰值电流:10 A封装主体材料:PLASTIC/EPOXY
封装代码:TO-252封装等效代码:SMSIP5H,.37,50TB
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:12 V
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:2.5 mm子类别:Peripheral Drivers
最大供电电压:38 V最小供电电压:5.5 V
标称供电电压:12 V表面贴装:YES
技术:MOS端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.14 mm
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:500 µs接通时间:500 µs
宽度:6.22 mmBase Number Matches:1

BTS6133D 数据手册

 浏览型号BTS6133D的Datasheet PDF文件第3页浏览型号BTS6133D的Datasheet PDF文件第4页浏览型号BTS6133D的Datasheet PDF文件第5页浏览型号BTS6133D的Datasheet PDF文件第7页浏览型号BTS6133D的Datasheet PDF文件第8页浏览型号BTS6133D的Datasheet PDF文件第9页 
Data sheet BTS 6133 D  
Parameter and Conditions  
Symbol  
Values  
Unit  
at T= 25, V = 12 V unless otherwise specified  
bb  
j
min  
typ  
max  
Diagnostic Characteristics  
Current sense ratio, static on-condition  
KILIS  
-- 10 000  
--  
15)  
kILIS =IL :IIS, IIS < IIS,lim  
,
VIS <VOUT - 5V, VbIN >4.5V  
IL = 30A, Tj = -40°C:  
Tj = +25°C:  
8300 10000 11000  
8300 9700 10600  
8300 9300 10000  
Tj = +150°C:  
IL = 7.5A, Tj = -40°C:  
Tj = +25°C:  
7500 10000 11400  
8000 9700 10800  
8200 9300 10200  
Tj = +150°C:  
IL = 2.5A, Tj = -40°C:  
Tj = +25°C:  
6100 10000 14200  
6500 9700 12800  
7600 9300 11500  
Tj = +150°C:  
IIN = 0 (e.g. during deenergizing of inductive loads):  
--  
0
--  
Sense current under fault conditions 16)  
V
>1V, typ  
T =-40...+150°C:  
j
IIS,fault  
IIS,lim  
4.0  
5.2  
7.5  
mA  
ON  
Sense saturation current  
V
<1V, typ  
T =-40...+150°C:  
j
4.0  
6.0  
7.5  
mA  
ON  
Fault-Sense signal delay after input current positive tdelay(fault)  
350  
650 1200  
µs  
slope, VON >1V, T = -40...+150°C  
j
Current sense leakage current, IIN =0  
IIS(LL)  
IIS(LH)  
--  
--  
0.1  
1
0.5  
60  
µA  
µA  
Current sense offset current, VIN =0, IL 0  
Current sense settling time to IIS static after input  
current positive slope, 17)  
tson(IS)  
--  
250  
500  
µs  
IL = 0  
Current sense settling time during on condition, 17)  
IL = 10 20 A, Tj= -40...+150°C  
20 A, Tj= -40...+150°C  
tslc(IS)  
--  
50  
67  
100  
--  
µs  
Overvoltage protection  
Ibb =15mA  
Tj =-40...+150°C: VZ,IS  
63  
V
15)  
See also figures 4.x and 6.x on page 13 and 14.  
Fault conditions are overload during on (i.e. VON>1V typ.), overtemperature and short circuit; see also truth  
table on page 8.  
16)  
17)  
not subject to production test, specified by design  
Infineon Technologies AG  
Page 6 of 15  
2003-Oct-01  

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