Datasheet > BTA316X-600B

BTA316X-600B

更新时间： 2024-04-09 19:01:19

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描述
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package i

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BTA316X-600B 数据手册

WeEn Semiconductors

BTA316X-600B

3Q Hi-Com Triac

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

I_H

holding current

on-state voltage

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 18 A; T_j= 25 °C; Fig. 10

V_T

1.3

1.5

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 402 V; T_j= 125 °C; (V_DM= 67%

1000

V/µs

voltage

of V_DRM); exponential waveform; gate

open circuit

dI_com/dt

rate of change of

commutating current

V_D= 400 V; T_j= 125 °C; I_T(RMS)= 16 A;

dV_com/dt = 20 V/µs; (snubberless

condition); gate open circuit

A/ms

5. Pinning information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

main terminal 1

main terminal 2

gate

sym051

n.c.

mounting base; isolated

2 3

TO-220F (SOT186A)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

SOT186A

BTA316X-600B

TO-220F

plastic single-ended package; isolated heatsink mounted; 1

mounting hole; 3-lead TO-220 "full pack"

BTA316X-600B

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Product data sheet

12 September 2018

2 / 13

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