Datasheet > BT151S-650L

BT151S-650L

更新时间： 2024-04-09 19:01:10

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
12页	267K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring sensitive gate, high bidirectional blocking voltage capability, high surge current capability and high thermal cycling performance.

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BT151S-650L 数据手册

BT151S-650L

SCR

5 September 2018

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable

plastic package intended for use in applications requiring sensitive gate, high bidirectional blocking

voltage capability, high surge current capability and high thermal cycling performance.

2. Features and benefits

•

High bidirectional blocking voltage capability

•

High surge current capability

High thermal cycling performance

Sensitive gate

Surface mountable package

3. Applications

•

Ignition circuits

Motor control

Protection circuits

Voltage regulation

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse

voltage

650

I_T(AV)

I_T(RMS)

I_TSM

average on-state

current

half sine wave; T_mb≤ 103 °C; Fig. 1

7.5

RMS on-state current

half sine wave; T_mb≤ 103 °C; Fig. 2;

Fig. 3

non-repetitive peak on- half sine wave; T_j(init)= 25 °C;

state current

120

132

125

t_p= 10 ms; Fig. 4; Fig. 5

half sine wave; T_j(init)= 25 °C;

t_p= 8.3 ms

T_j

junction temperature

°C

Static characteristics

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 8

Dynamic charateristics

dV_D/dt

rate of rise of off-state V_DM= 436 V; T_j= 125 °C; R_GK= 100 Ω;

voltage exponential waveform; Fig. 13

200

1000

V/µs

12 3 4 5 6 7...12

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