Datasheet > BT136X-600E

BT136X-600E

更新时间： 2024-04-09 18:59:41

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
13页	477K
描述
Planar passivated sensitive gate four quadrant triac in a SOT186A "full pack" plastic package inte

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BT136X-600E 数据手册

WeEn Semiconductors

BT136X-600E

4Q Triac

11. Characteristics

Table 8. Characteristics

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

2.5

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 7

I_L

latching current

V_D= 12 V; I_G= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 8

2.5

V_D= 12 V; I_G= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 8

I_H

holding current

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 5 A; T_j= 25 °C; Fig. 10

2.2

1.4

0.7

1.7

V_T

V_GT

on-state voltage

gate trigger voltage

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C;

Fig. 11

V_D= 400 V; I_T= 0.1 A; T_j= 125 °C

V_D= 600 V; T_j= 125 °C

0.25

0.4

0.1

I_D

oﬀ-state current

0.5

Dynamic characteristics

dV_D/dt

t_gt

rate of rise of oﬀ-state

voltage

V_DM= 402 V; T_j= 125 °C; (V_DM= 67%

of V_DRM); exponential waveform; gate

open circuit

V/μs

μs

gate-controlled turn-on

V_D= 600 V; I_TM= 6 A; I_G= 0.1 A;

time

dI_G/dt = 5 A/μs

BT136X-600E

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Product data sheet

19 December 2022

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