5秒后页面跳转
BSM300C12P3E201 PDF预览

BSM300C12P3E201

更新时间: 2024-02-19 07:32:41
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
11页 1462K
描述
Power Field-Effect Transistor,

BSM300C12P3E201 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:4 weeks
风险等级:2.26峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BSM300C12P3E201 数据手册

 浏览型号BSM300C12P3E201的Datasheet PDF文件第2页浏览型号BSM300C12P3E201的Datasheet PDF文件第3页浏览型号BSM300C12P3E201的Datasheet PDF文件第4页浏览型号BSM300C12P3E201的Datasheet PDF文件第5页浏览型号BSM300C12P3E201的Datasheet PDF文件第6页浏览型号BSM300C12P3E201的Datasheet PDF文件第7页 
SiC Power Module  
Datasheet  
BSM300C12P3E201  
Application  
Circuit diagram  
Motor drive  
1
7
Converter  
9(N.C)  
8
Photovoltaics, wind power generation.  
3,4  
6
5
Features  
2
*Do not connect anything to NC pin.  
1) Low surge, low switching loss.  
2) High-speed switching possible.  
3) Reduced temperature dependence.  
Construction  
This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM.  
Dimensions & Pin layout (Unit : mm)  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
2017.02 - Rev.B  
1/10  

与BSM300C12P3E201相关器件

型号 品牌 描述 获取价格 数据表
BSM300C12P3E301 ROHM Power Field-Effect Transistor,

获取价格

BSM300D12P2E001 ROHM BSM300D12P2E001由罗姆公司生产的SiC-DMOSFET和SiC-SBD构成,

获取价格

BSM300D12P3E005 ROHM BSM300D12P3E005是一款半桥型SiC功率模块,由罗姆制造的SiC-UMOSFE

获取价格

BSM300D12P4G101 (新产品) ROHM BSM300D12P4G101 is a half bridge module consisting of SiC-UMOSFET, suitable for motor driv

获取价格

BSM300GA100D ETC TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 300A I(C)

获取价格

BSM300GA120D ETC TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 300A I(C)

获取价格