Datasheet > BS616LV1013EI

BS616LV1013EI

更新时间： 2022-12-11 23:02:14

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
9页	259K
描述
Very Low Power/Voltage CMOS SRAM 64K X 16 bit

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数据手册

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BS616LV1013EI 数据手册

BSI

BS616LV1013

SWITCHING WAVEFORMS (READ CYCLE)

READ CYCLE1 ^(1,2,4)

ADDRESS

D _OUT

READ CYCLE2 ^(1,3,4)

ACS

LB,UB

(5)

CHZ

BDO

(5)

CLZ

D _OUT

READ CYCLE3 ^(1,4)

ADDRESS

OLZ

(5)

₍₅₎t ACS

OHZ

(1,5)

CHZ

CLZ

LB,UB

D _OUT

BDO

NOTES:

1. WE is high for read Cycle.

2. Device is continuously selected when CE = V^IL

3. Address valid prior to or coincident with CE transition low.

4. OE = V^IL

5. Transition is measured 500mV from steady state with CL = 5pF as shown in Figure 1B.

The parameter is guaranteed but not 100% tested.

Revision 1.1

Jan. 2004

R0201-BS616LV1013

1 2 3 456 7 8 9

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