Datasheet > BS616LV1013AI

BS616LV1013AI

更新时间： 2022-12-11 23:02:14

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
9页	259K
描述
Very Low Power/Voltage CMOS SRAM 64K X 16 bit

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BS616LV1013AI 数据手册

BSI

BS616LV1013

(1,6)

WRITE CYCLE2

ADDRESS

(11)

(5)

LB,UB

(3)

(2)

(4,10)

(7)

(8)

WHZ

D _OUT

(8,9)

D _IN

NOTES:

1. WE must be high during address transitions.

2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals

must be active to initiate a write and any one signal can terminate a write by going inactive.

The data input setup and hold timing should be referenced to the second transition edge of

the signal that terminates the write.

3. T^WRis measured from the earlier of CE or WE going high at the end of write cycle.

4. During this period, DQ pins are in the output state so that the input signals of opposite phase

to the outputs must not be applied.

5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE

transition, output remain in a high impedance state.

6. OE is continuously low (OE = V^IL).

7. D^OUTis the same phase of write data of this write cycle.

8. D^OUTis the read data of next address.

9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of

opposite phase to the outputs must not be applied to them.

10. Transition is measured 500mV from steady state with C^L= 5pF as shown in Figure 1B.

The parameter is guaranteed but not 100% tested.

11. T^CWis measured from the later of CE going low to the end of write.

12. The change of Read/Write cycle must accompany with CE or address toggled.

Revision 1.1

R0201-BS616LV1013

Jan.

2004

1...4 5 678 9

下载PDF

与BS616LV1013AI相关器件

型号	品牌	描述	获取价格	数据表
BS616LV1013AI70	BSI	Standard SRAM, 64KX16, 70ns, CMOS, PBGA48	获取价格
BS616LV1013AI-70	BSI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit	获取价格
BS616LV1013AIG70	BSI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit	获取价格
BS616LV1013AIP70	BSI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit	获取价格
BS616LV1013EC	BSI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit	获取价格
BS616LV1013EC70	BSI	Standard SRAM, 64KX16, 70ns, CMOS, PDSO44	获取价格