Datasheet > BR25H010FVT-5AC

BR25H010FVT-5AC

更新时间： 2023-09-03 20:25:12

品牌	Logo	应用领域
罗姆 - ROHM		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
44页	1695K
描述
BR25H010xxx-5AC系列是支持SPI BUS接口的1KBit串行EEPROM。

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BR25H010FVT-5AC 数据手册

BR25H010xxx-5AC Series

Thermal Resistance ^{(Note 6)}- continued

Thermal Resistance (Typ)

Parameter

Symbol

Unit

1s^{(Note 8)}

2s2p^{(Note 9)}

VSON08AX2030

299.5

77.8

Junction to Ambient

Junction to Top Characterization Parameter^{(Note 7)}

θ_JA

°C/W

Ψ_JT

(Note 6) Based on JESD51-2A(Still-Air)

(Note 7) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface

of the component package.

(Note 8) Using a PCB board based on JESD51-3.

(Note 9) Using a PCB board based on JESD51-5, 7.

Layer Number of

Measurement Board

Material

FR-4

Board Size

Single

114.3 mm x 76.2 mm x 1.57 mmt

Top

Copper Pattern

Thickness

70 μm

Footprints and Traces

Thermal Via^{(Note 10)}

Layer Number of

Measurement Board

Material

FR-4

Board Size

Pitch

1.20 mm

Diameter

4 Layers

114.3 mm x 76.2 mm x 1.6 mmt

2 Internal Layers

Φ 0.30 mm

Top

Copper Pattern

Bottom

Thickness

70 μm

Copper Pattern

Thickness

35 μm

Copper Pattern

Thickness

Footprints and Traces

74.2 mm x 74.2 mm

70 μm

(Note 10) This thermal via connects with the copper pattern of all layers.

Operating Conditions

Parameter

Supply Voltage

Symbol

Min

Typ

Max

Unit

V_CC

1.7

-40

0.1

5.5

+125

Ambient Operating Temperature

Bypass Capacitor^{(Note 11)}

°C

μF

(Note 11) Connect a bypass capacitor between the IC’s VCC and GND pin.

Input/Output Capacitance

Parameter

(

Ta = 25 °C

f = 5 MHz

)

Symbol

Min

Typ

Max

Unit

Conditions

Input Capacitance^{(Note 12)}

Output Capacitance^{(Note 12)}

C_IN

V_IN= GND

V_OUT= GND

C_OUT

(Note 12) Not 100 % Tested.

Memory Cell Characteristics (V_CC= 1.7 V to 5.5 V)

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

4,000,000

1,200,000

500,000

300,000

100

Times Ta = 25 °C

Times Ta = 85 °C

Write Cycles^{(Note 13, 14)}

Times Ta = 105 °C

Times Ta = 125 °C

Years Ta = 25 °C

Years Ta = 105 °C

Years Ta = 125 °C

Data Retention^{(Note 13)}

(Note 13) Not 100 % Tested.

(Note 14) The Write Cycles is defined for unit of 4 data bytes with the same address bits of WA6 to WA2.

www.rohm.com

TSZ02201-0G1G0G100640-1-2

12.Jan.2022 Rev.001

5/41

TSZ22111 • 15• 001

1 2 3 456 7 8...44

下载PDF

与BR25H010FVT-5AC相关器件

型号	品牌	描述	获取价格	数据表
BR25H010FVT-WE2	ROHM	EEPROM, 128X8, Serial, CMOS, PDSO8, LEAD FREE, TSSOP-8	获取价格
BR25H010FV-WE2	ROHM	EEPROM, 128X8, Serial, CMOS, PDSO8, LEAD FREE, SSOP-8	获取价格
BR25H010F-W	ROHM	HIGH GRADE Specification HIGH RELIABILITY ser	获取价格
BR25H010F-WC	ROHM	EEPROM, 128X8, Serial, CMOS, PDSO8, ROHS COMPLIANT, SOP-8	获取价格
BR25H010F-WCE2	ROHM	EEPROM, 128X8, Serial, CMOS, PDSO8, SOP-8	获取价格
BR25H010F-WE2	ROHM	HIGH GRADE Specification HIGH RELIABILITY ser	获取价格