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BQ7720701DSSR PDF预览

BQ7720701DSSR

更新时间: 2023-09-03 20:27:05
品牌 Logo 应用领域
德州仪器 - TI 电池
页数 文件大小 规格书
26页 1406K
描述
3 系列至 7 系列锂离子电池、内部延迟计时器、电压和温度保护器 | DSS | 12 | -40 to 110

BQ7720701DSSR 数据手册

 浏览型号BQ7720701DSSR的Datasheet PDF文件第3页浏览型号BQ7720701DSSR的Datasheet PDF文件第4页浏览型号BQ7720701DSSR的Datasheet PDF文件第5页浏览型号BQ7720701DSSR的Datasheet PDF文件第7页浏览型号BQ7720701DSSR的Datasheet PDF文件第8页浏览型号BQ7720701DSSR的Datasheet PDF文件第9页 
BQ77207  
www.ti.com.cn  
ZHCSPB8A DECEMBER 2021 REVISED JUNE 2022  
8.5 DC Characteristics (continued)  
Typical values stated where TA = 25°C and VDD = 25 V, MIN/MAX values stated where TA = 40°C to 85°C and VDD = 5 V  
to 38.5 V (unless otherwise noted).  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
°C  
(1)  
(2)  
TOT_ACC  
TOT_HYS  
RTC  
OT Detection Accuracy (NTC)  
5
5  
°C  
10  
4186  
3530  
20  
OT Detection Hysteresis (NTC)  
Internal Pull Up Resistor  
Ω
Ω
After TI Factory Trim  
19.4  
20.6  
0.0  
kΩ  
UNDER TEMPERATURE PROTECTION (UT)  
TUT  
UT Detection Threshold  
°C  
30.0  
111100  
68900  
42200  
26700  
NTC UT Detection External  
Resistance  
RUT_EXT_NTC  
Ω
UT Detection External  
Resistance Accuracy  
RUT_ACC  
2%  
5
2%  
5  
10  
°C  
TUT_HYS  
UT Detection Hysteresis (NTC)  
17800  
Ω
(1)  
TUT_ACC  
UT Detection Accuracy (NTC)  
°C  
OPEN WIRE PROTECTION (OW)  
Vn < Vn-1 where n = 2 to 7  
V1 - VSS  
mV  
mV  
mV  
mV  
200  
500  
VOW  
OW Detection Threshold  
VOW_HYS  
VOW_ACC  
OW Detection Hysteresis  
OW Detection Accuracy  
Vn < Vn-1 where n = 1 to 7  
-40 TA 110℃  
VOW +100  
25  
25  
SUPPLY AND LEAKAGE CURRENT  
ICC  
Supply Current  
Supply Current  
No fault detected.  
2
3.5  
25  
µA  
µA  
Fault detected, COUT active High 6V  
output, DOUT active low. Other faults  
ICC_FAULT  
20  
Fault detected, COUT active High 6V  
output, DOUT active low. UV fault  
only  
ICC_FAULT  
Supply Current  
3
5
µA  
Vn - Vn-1 and V1 - VSS = 4V, where  
n = 2 to 7, Open Wire Enabled  
0.3  
0.1  
µA  
µA  
0.3  
0.1  
(2)  
IIN  
Input Current at Vx Pins  
Vn - Vn-1 and V1 - VSS = 4V, where  
n = 2 to 7, Open Wire Disabled  
OUTPUT DRIVE, COUT and DOUT, CMOS ACTIVE HIGH VERSIONS ONLY  
Vn - Vn-1 or V1 - VSS > VOV, where  
n = 2 to 7, VDD = 25V, IOH = 100 µA  
measured out of COUT, DOUT pin.  
Output Drive Voltage for COUT  
and DOUT, Active High 6V  
6
0
V
V
VDD - VCOUT or VDOUT, Vn - Vn-1 or  
Output Drive Voltage for COUT V1 - VSS > VOV, where n = 2 to 7, IOH  
1
1
1.5  
1.5  
and DOUT, Active High VDD  
= 10 µA measured out of COUT,  
DOUT pin.  
VOUT_AH  
VDD - VCOUT or VDOUT, If 6 of 7 cells  
Output Drive Voltage for COUT are short circuited and only one cell  
0
V
and DOUT, Active High 6V  
remains powered and > VOV, VDD =  
Vx (cell voltage), IOH = 100 µA,  
Output Drive Voltage for COUT Vn - Vn-1 and V1 - VSS < VOV, where  
and DOUT, Active High 6V and n = 2 to 7, VDD = 25 V, IOH = 100 µA  
250  
100  
400  
120  
mV  
VDD  
measured into pin  
ROUT_AH  
Internal Pull Up Resistor  
80  
kΩ  
Copyright © 2022 Texas Instruments Incorporated  
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Product Folder Links: BQ77207  

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