Datasheet > BL7N70D

BL7N70D

更新时间： 2024-04-09 18:58:41

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	504K
描述
7A, 700V, 60W, N Channel,Power MOSFETs

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BL7N70D 数据手册

Product Specification

N-Channel Enhancement Mode MOSFET BL7N70I/BL7N70D

FEATURES



R_DS(ON)= 1.3Ω @ V_GS= 10V

Ultra low gate charge

Low reverse transfer Capacitance

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

TO-251

TO-252

Ordering Information

Part Number

Package

Shipping

Marking Code

BL7N70I

TO-251

TO-252

80 pcs / Tube

7N70I

BL7N70D

80 pcs / Tube or 2500 pcs / Tape & Reel

7N70D

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

V_GSS

I_D

Drain-Source voltage

Gate -Source voltage

Continuous Drain Current

Pulsed Drain Current

Avalanche Energy

700

±30

I_DM

E_AS

E_AR

Single Pulsed

Repetitive

440

dv/dt

P_D

Peak Diode Recovery dv/dt

4.5

V/ns

Power Dissipation (Tc=25℃)

Thermal resistance,Junction-to-Ambient

Thermal resistance,Junction-to-Case

Junction Temperature

R_θJA

R_θJC

T_J

110

2.08

+150

℃/W

℃

T_STG

Operating and Storage Temperature

-55 to +150

℃

MTM0359A

www.gmesemi.com

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