Datasheet > BL7N80B

BL7N80B

更新时间： 2024-09-25 17:01:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	772K
描述
7A, 800V, 133W, N Channel, Power MOSFETs

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数据手册

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BL7N80B 数据手册

N-Channel Enhancement Mode MOSFET

BL7N80B

Features



Fast switching

Low R_DS(ON)

Low gate charge

Low reverse transfer capacitances

Mechanical Data



Case: TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-263

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

7N80B

BL7N80B

TO-263

50 pcs / Tube & 800 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

800

±30

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current

I_D

4.2

I_DM

E_AS

P_D

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

Operating Junction Temperature Range

Storage Temperature Range

235

°C

133

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

0.94

62.5

°C /W

MTM1263A: June 2023 [1.0]

www.gmesemi.com

12 3 4 5

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