Datasheet > BH616UV1611_08

BH616UV1611_08

更新时间： 2022-10-17 04:55:33

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
10页	224K
描述
Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit

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BH616UV1611_08 数据手册

Ultra Low Power/High Speed CMOS SRAM

1M X 16 bit

BH616UV1611

Pb-Free and Green package materials are compliant to RoHS

FEATURES

DESCRIPTION

y Wide V_CClow operation voltage : 1.65V ~ 3.6V

y Ultra low power consumption :

The BH616UV1611 is a high performance, ultra low power CMOS

Static Random Access Memory organized as 1,048,576 by 16 bits

and operates in a wide range of 1.65V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with maximum standby current of

39uA at 3.6V/85^OC and maximum access time of 55/70ns at

3.0V/1.8V.

Easy memory expansion is provided by an active LOW chip enable

(CE1), an active HIGH chip enable (CE2) and active LOW output

enable (OE) and three-state output drivers.

V_CC= 3.6V

Operation current : 12mA (Max.)at 55ns

2mA (Max.)at 1MHz

Standby current : 30uA (Max.) at 3.6V/85^OC

Data retention current : 15uA(Max.) at 85^OC

V_CC= 1.2V

y High speed access time :

-55/-70 55ns (Max.) at V_CC=3.0V

70ns (Max.) at V_CC=1.8V

y Automatic power down when chip is deselected

y Easy expansion with CE1, CE2 and OE options

y I/O Configuration x8/x16 selectable by LB and UB pin.

y Three state outputs and TTL compatible

The BH616UV1611 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BH616UV1611 is made with two chips of 8Mbit SRAM by

stacked multi-chip-package.

y Fully static operation, no clock, no refresh

y Data retention supply voltage as low as 1.0V

The BH616UV1611 is available in 48-ball BGA package.

POWER CONSUMPTION

POWER DISSIPATION

Operating

STANDBY

PRODUCT

FAMILY

OPERATING

PKG TYPE

(I_CCSB1, Max)

(I_CC, Max)

TEMPERATURE

V_CC=3.6V

10MHz

V_CC=1.8V

10MHz

V_CC=3.6V V_CC=1.8V

1MHz

2mA

f_Max.

1MHz

f_Max.

Industrial

BH616UV1611AI

30uA

25uA

6mA

12mA

1.5mA

5mA

8mA

BGA-48-0608

-40^OC to +85^OC

PIN CONFIGURATIONS

BLOCK DIAGRAM

A12

A11

A10

CE2

Address

Input

1024

Memory Array

1024 x 16384

Row

Decoder

DQ8

DQ9

VSS

CE1

DQ1

DQ3

DQ4

DQ5

DQ0

DQ2

VCC

VSS

DQ6

DQ7

Buffer

DQ10

DQ11

16384

DQ0

A17

A14

A12

Column I/O

Data

Input

Write Driver

Sense Amp

Buffer

VCC DQ12

DQ14 DQ13

A16

A15

A13

A10

Data

Output

Buffer

1024

Column Decoder

DQ15

CE2, CE1

DQ15

A18

A19

Address Input Buffer

Control

A11

A19 A18 A17 A15 A14 A13 A16 A2 A1 A0

V_CC

V_SS

48-ball BGA top view

Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.

Detailed product characteristic test report is available upon request and being accepted.

R0201-BH616UV1611

Revision

Oct.

1.1

2008

12 3 4 5 6 7...10

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与BH616UV1611_08相关器件

型号	品牌	描述	获取价格	数据表
BH616UV1611AI55	BSI	SRAM	获取价格
BH616UV1611AIG55	BSI	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	获取价格
BH616UV1611AIG70	BSI	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	获取价格
BH616UV1611AIP55	BSI	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	获取价格
BH616UV1611AIP70	BSI	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	获取价格
BH616UV1611BI55	BSI	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit	获取价格

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