Datasheet > BGY68_15

BGY68_15

更新时间： 2022-02-26 13:21:15

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
8页	54K
描述
75 MHz, 30 dB gain reverse amplifier

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BGY68_15 数据手册

Philips Semiconductors

Product speciﬁcation

75 MHz, 30 dB gain reverse ampliﬁer

BGY68

FEATURES

PINNING - SOT115J

• Excellent linearity

DESCRIPTION

• Extremely low noise

input

• Silicon nitride passivation

• Rugged construction

common

+V_B

• Gold metallization ensures excellent reliability.

common

output

APPLICATIONS

Reverse amplifier in two-way CATV systems in the

5 to 75 MHz frequency range.

handbook, halfpage

DESCRIPTION

Hybrid high dynamic range amplifier module in a SOT115J

package operating at a voltage supply of 24 V (DC).

Side view

MSA319

Fig.1 Simplified outline.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

power gain

total current consumption (DC)

CONDITIONS

f = 10 MHz

V_B= 24 V

MIN.

29.2

MAX.

30.8

135

UNIT

G_p

I_tot

−

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER

MIN.

MAX.

UNIT

V_i

RF input voltage

−

dBmV

°C

T_stg

storage temperature

−40

−20

+100

T_mb

operating mounting base temperature

°C

2001 Oct 18

123 4 5 6 7 8

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