Philips Semiconductors
Product specification
UHF amplifier module
BGY240S
CHARACTERISTICS
ZS = ZL = 50 Ω; PD = 1 mW; VS = 3.5 V; VC ≤ 2.2 V; f = 890 to 915 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs unless
otherwise specified.
SYMBOL
IQ
PARAMETER
leakage current
CONDITIONS
MIN.
TYP.
MAX.
10
UNIT
µA
VC = 0.2 V
−
−
3
−
−
ICM
PL
peak control current
load power
adjust VC for PL = 2.5 W
VC = 2.2 V
3
mA
W
3.5
−
Gp
power gain
adjust VC for PL = 2.5 W
adjust VC for PL = 2.5 W
adjust VC for PL = 2.5 W
adjust VC for PL = 2.5 W
adjust VC for PL = 2.5 W
35
−
−
−
dB
%
η
efficiency
44
−
H2
second harmonic
third harmonic
input VSWR
stability
−
−
−35
−33
3 : 1
−60
dBc
dBc
H3
−
−
VSWRin
−
1.8 : 1
VS = 3 to 5 V; PD = −2 to +5 dBm;
VC = 0 to 2.2 V; PL ≤ 3 W;
−
−
dBc
VSWR ≤ 12 : 1 through all phases
isolation
VC = 0.2 V
−
−
−45
−82
−36
−80
dBm
dBm
Pn
noise power
PL = 2.5 W; bandwidth = 30 kHz;
10 MHz above transmission band
AM/PM conversion
AM/AM conversion
carrier rise time
carrier fall time
ruggedness
PD = −2 to +5 dBm;
PL = 6 to 34 dBm
−
−
−
−
−
3
deg/dB
%
PD with 3% AM; f = 100 kHz;
PL = 6 to 34 dBm
−
12
2
tr
tf
PL = 6 to 34 dBm; time to settle
within −0.5 dB of final PL
1.5
1.5
µs
PL = 6 to 34 dBm; time to settle
within −0.5 dB of final PL
2
µs
VS = 5 V; adjust VC for PL = 3 W;
VSWR ≤ 12 : 1 through all phases
no degradation
1999 Aug 23
3