BGY136

更新时间： 2024-02-26 11:53:41

品牌	Logo	应用领域
恩智浦 - NXP		射频和微波射频放大器微波放大器功率放大器高功率电源
页数	文件大小	规格书
10页	106K
描述
VHF power amplifier modules

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技术参数
数据手册

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BGY136 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.7	最高工作温度：	100 °C
最低工作温度：	-40 °C	封装主体材料：	CERAMIC
封装等效代码：	MOT CASE 700-04	电源：	12.5 V
子类别：	RF/Microwave Amplifiers	技术：	HYBRID
Base Number Matches：	1

BGY136 数据手册

Philips Semiconductors

Product speciﬁcation

VHF power ampliﬁer modules

BGY135; BGY136

FEATURES

PINNING - SOT132B

• 12.5 V nominal supply voltage

• 18 W output power.

DESCRIPTION

RF input

ground

V_S1

APPLICATIONS

ground

V_S2

• Mobile communication equipment operating directly

from 12 V vehicle electrical systems.

ground

DESCRIPTION

RF output

ground

Flange

The BGY135 and BGY136 are two-stage broadband RF

amplifier modules in a SOT132B package. Each module

consists of two NPN transistor dies together with

lumped-element matching components.

handbook, halfpage

5 6 7

1 2 3 4

Top view

MSB029

Fig.1 Simplified outline.

QUICK REFERENCE DATA

TYPE

MODE OF

V_S1; V_S2

P_D

P_L

Z_S; Z_L

NUMBER

OPERATION

(MHz)

(V)

(mW)

(W)

(Ω)

BGY135

BGY136

132 to 156

146 to 174

12.5

150

≥18

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO inserts are not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1996 May 08

123 4 5 6 7...10

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