BGE788C
Philips Semiconductors
750 MHz, 34 dB gain push-pull amplifier
5. Characteristics
Table 5:
Characteristics
Bandwidth 40 MHz to 750 MHz; VB = 24 V; Tmb = 30 °C; ZS = ZL = 75 Ω.
Symbol
Parameter
Conditions
Min
33.2
33.5
0.3
-
Typ
Max
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
Gp
power gain
f = 50 MHz
-
-
-
-
-
-
-
-
-
-
-
-
35.2
f = 750 MHz
-
SL
slope cable equivalent
flatness of frequency response
input return losses
f = 40 MHz to 750 MHz
f = 40 MHz to 750 MHz
f = 40 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
f = 40 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
f = 50 MHz
2.3
FL
±0.6
2
|s11
|
16
-
15
-
14
-
2
|s22
|
output return losses
16
-
15
-
14
-
ϕs21
phase response
135
-
225
−49
CTB
composite triple beat
110 channels flat;
Vo = 44 dBmV;
measured at 745.25 MHz
CSO
composite second order
distortion
110 channels flat;
Vo = 44 dBmV;
-
-
−52
dB
measured at 746.5 MHz
NF
Itot
noise figure
f = 50 MHz
-
-
-
8
dB
[1]
total current consumption
285
325
mA
[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
9397 750 14607
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 1 April 2005
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