Datasheet > BGE788C,112

BGE788C,112

更新时间： 2024-01-16 07:59:12

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
8页	85K
描述
750 MHz, 34 dB gain push-pull amplifier SFM 7-Pin

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技术参数
数据手册

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BGE788C,112 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SFM
针数：	7	Reach Compliance Code：	not_compliant
风险等级：	8.49	Base Number Matches：	1

BGE788C,112 数据手册

BGE788C

NXP Semiconductors

750 MHz, 34 dB gain push-pull amplifier

5. Characteristics

Table 5.

Characteristics

Bandwidth 40 MHz to 750 MHz; V_B= 24 V; T_mb= 30 C; Z_S= Z_L= 75 .

Symbol

Parameter

Conditions

Min

33.2

33.5

0.3

Typ

Max

Unit

deg

G_p

power gain

f = 50 MHz

35.2

f = 750 MHz

slope cable equivalent

flatness of frequency response

input return losses

f = 40 MHz to 750 MHz

f = 40 MHz to 320 MHz

f = 320 MHz to 640 MHz

f = 640 MHz to 750 MHz

f = 40 MHz to 320 MHz

f = 320 MHz to 640 MHz

f = 640 MHz to 750 MHz

f = 50 MHz

2.3

s₁₁²

0.6

s₂₂²

output return losses

_s21

phase response

135

225

49

CTB

composite triple beat

110 channels flat;

V_o= 44 dBmV;

measured at 745.25 MHz

CSO

composite second order

distortion

110 channels flat;

V_o= 44 dBmV;

52

measured at 746.5 MHz

I_tot

noise figure

f = 50 MHz

[1]

total current consumption

285

325

[1] The module normally operates at V_B= 24 V, but is able to withstand supply transients up to 30 V.

BGE788C

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2 — 16 September 2011

3 of 8

1 234 5 6 7 8

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