Datasheet > BDS20

BDS20

更新时间： 2024-04-09 18:59:34

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描述
Silicon Epibase NPN Darlington Transistor

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数据手册

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BDS20 数据手册

SILICON EPIBASE NPN

DARLINGTON TRANSISTOR

BDS20

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)

Symbols

Parameters

Test Conditions

Min. Typ

Max. Units

= 80V

= 60V

I = 0

0.2

I = 0

Collector-Cut-Off Current

CBO

1.0

= 150°C

= 40V

= 5V

I = 0

Collector-Cut-Off Current

Emitter-Cut-Off Current

0.5

CEO

I = 0

EBO

= 0.5A

= 3A

= 5A

= 3V

1000

(1)

Forward-current transfer

ratio

= 3V

I = 12mA

(1)

Collector-Emitter Saturation

Voltage

CE(sat)

I = 20mA

(1)

Base-Emitter Saturation

Voltage

= 5A

= 3A

I = 20mA

2.8

BE(sat)

(1)

= 3V

Base-Emitter On Voltage

3.5

BE(on)

DYNAMIC CHARACTERISTICS

= 0.5A

= 4V

Transition Frequency

MHz

f = 2MHz

Notes

(1) Pulse Width ≤ 300us, δ ≤ 2%

10.6 (0.42)

4.6 (0.18)

0.8

(0.03)

MECHANICAL DATA

Dimensions in mm (inches)

3.70Dia. Nom

1 2 3

1.0

(0.039)

2.54 (0.1)

BSC

TO220M(TO-257AB)

2.70

(0.106)

Pin 1 – Base

Pin 2 – Collector

Pin 3 - Emitter

Semelab Limited

Telephone +44 (0) 1455 556565

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Fax +44 (0) 1455 552612

Document Number 8215

Issue 1

Page 2 of 2

Email: sales@semelab-tt.com

Website: http://www.semelab-tt.com

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