Datasheet > BD9898FV-E2

BD9898FV-E2

更新时间： 2024-01-17 09:01:07

品牌	Logo	应用领域
罗姆 - ROHM		光电二极管
页数	文件大小	规格书
5页	213K
描述
Analog Circuit, 1 Func, PDSO28, SSOP-28

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BD9898FV-E2 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	LSSOP, TSSOP28,.3
Reach Compliance Code：	compliant	HTS代码：	8542.39.00.01
风险等级：	5.57	模拟集成电路 - 其他类型：	ANALOG CIRCUIT
控制模式：	VOLTAGE-MODE	JESD-30 代码：	R-PDSO-G28
JESD-609代码：	e3	长度：	10 mm
湿度敏感等级：	1	功能数量：	1
端子数量：	28	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	LSSOP	封装等效代码：	TSSOP28,.3
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：	225	认证状态：	Not Qualified
座面最大高度：	1.35 mm	子类别：	Switching Regulator or Controllers
最大供电电压 (Vsup)：	30 V	最小供电电压 (Vsup)：	16 V
标称供电电压 (Vsup)：	24 V	表面贴装：	YES
最大切换频率：	110 kHz	温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	5.6 mm
Base Number Matches：	1

BD9898FV-E2 数据手册

4/4

〇NOTE FOR USE

１. This product is produced with strict quality control, but might be destroyed if used beyond its absolute

maximum ratings. Once IC is destroyed, failure mode will be difficult to determine, like short mode or

open mode. Therefore, physical protection countermeasure, like fuse is recommended in case operating

conditions go beyond the expected absolute maximum ratings.

２. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is

within recommended operating range. The standard electrical characteristic values cannot be guaranteed

at other voltages in the operating ranges, however the variation will be small. When it is used in between

STB-UVLO Diode short etc., the IC can operate VCC≧9V. Please refer to a Technical Note in detail.

３. Mounting failures, such as misdirection or miscounts, may harm the device.

４. A strong electromagnetic field may cause the IC to malfunction.

５. The GND pin should be the location within ±0.3V compared with the PGND pin. ALL Pin (except BST1, BST2,

HN1, HN2,) Voltage should be under VCC voltage +0.3V

６. BD9898F, BD9898FV incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown

circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not

designed to protect the IC or guarantee its operation of the thermal shutdown circuit is assumed.

７. When modifying the external circuit components, make sure to leave an adequate margin for external

components actual value and tolerance as well as dispersion of the IC.

８. About the external FET, theparasitic Capacitor may cause the gate voltage to change, when the drain voltage

is switching. Make sure to leave adequate margin for this IC variation.

９. Under operating CP charge (under error mode) analog dimming and burst dimming are not operate.

10. Under operating Slow Start Control (SS is less than 1.5V), It does not operate Timer Latch.

11. By STB voltage, BD9898F, BD9898FV are changed to 2 states. Therefore, do not input STB pin voltage between

one state and the other state (0.8～2.0V).

12. The pin connected a connector need to connect to the resistor for electrical surge destruction.

13. This IC is a monolithic IC which (as shown is Fig-1) has P⁺substrate and between the various pins.

A P-N junction is formed from this P layer of each pin. For example, the relation between each potential

is as follows,

○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)

○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)

Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can

result in mutual interference among circuits as well as operation faults and physical damage. Accordingly

you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than

the GND (P substrate) voltage to an input pin.

Transistor (NPN)

Resistance

(PinA)

(PinB)

Ｃ

GND

P^＋

Ｎ

P substrate

GND

Parasitic diode

P substrate

GND

Parasitic diode

(PinB)

(PinA)

Ｂ

Ｃ

Ｅ

Parasitic diode

GND

Other adjacent components

Parasitic diode

Fig-1 Simplified structure of a Bipolar IC

REV. B

1 2 345

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