BD899

更新时间： 2024-01-22 13:04:00

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
5页	108K
描述
NPN SILICON POWER DARLINGTONS

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中文翻译

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技术参数
数据手册

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BD899 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.74	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	8 A	集电极-发射极最大电压：	80 V
配置：	DARLINGTON	最小直流电流增益 (hFE)：	750
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
功耗环境最大值：	70 W	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	1 MHz
Base Number Matches：	1

BD899 数据手册

BD895, BD897, BD899, BD901

NPN SILICON POWER DARLINGTONS

●

Designed for Complementary Use with

BD896, BD898, BD900 and BD902

TO-220 PACKAGE

(TOP VIEW)

●

70 W at 25°C Case Temperature

8 A Continuous Collector Current

Minimum h of 750 at 3V, 3A

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD895

BD897

BD899

BD901

BD895

BD897

BD899

BD901

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

100

V_CEO

100

Base-emitter voltage

V_EBO

I_C

Continuous collector current

Continuous base current

0.3

I_B

Continuous device dissipation at (or below) 25°C case temperature (see Note 1)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)

Operating free-air temperature range

P_tot

T_A

°C

-65 to +150

Operating junction temperature range

T_j

Storage temperature range

T_stg

NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.

2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

AUGUST 1993 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4 5

中文翻译

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BD899-6264	RENESAS	获取价格	8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB