Datasheet > BD896

BD896

更新时间： 2024-02-03 17:57:08

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
4页	107K
描述
SILICON DARLINGTON POWER TRANSISTORS

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中文翻译

获取价格

技术参数
数据手册

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BD896 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.75
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
Base Number Matches：	1

BD896 数据手册

SEMICONDUCTORS

BD896 – BD898 – BD900 – BD902

SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220

enveloppe. They are intended for use in output stages in audio equipment, general amplifiers,

and analogue switching application.

NPN complements are BD895 - BD897 - BD899 - BD901

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

BD896

BD898

-45

-60

-80

-100

-45

-60

V_CBO

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-100

V_EBO

-5

-8

BD900

BD902

BD896

BD898

BD900

BD902

BD896

BD898

BD900

I_C

Collector Current

I_B

Base Current

-300

BD902

T_c= 25°

T_a= 25°

P_T

Power Dissipation

Watts

°C

T_J

T_s

150

Junction Temperature

-65 to +150

Storage Temperature range

25/09/2012

COMSET SEMICONDUCTORS

1 | 4

12 3 4

中文翻译

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BD8961NV_10	ROHM	获取价格	Low Noise High Efficiency Step-down Switching Regulator with Built-in Power MOSFET
BD8961NV_12	ROHM	获取价格	4.5V to 5.5V, 2.0A 1ch Synchronous Buck Converter Integrated FET
BD8961NV-E2	ROHM	获取价格	Low Noise High Efficiency Step-down Switching Regulator with Built-in Power MOSFET
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