Datasheet
Voltage Detector (Reset) IC Series for Automotive Application
Free Time Delay Setting
CMOS Voltage Detector (Reset) IC
BD52xxNVX-2C Series BD5320NVX-2C
General Description
Key Specifications
ROHM's Free Time Delay Setting CMOS Voltage
Detector ICs are highly accurate, with ultra-low current
consumption feature that uses CMOS process. Delay
time setting can be control by an external capacitor. The
lineup includes N-channel open drain output (BD52xx
NVX-2C) and CMOS output (BD5320NVX-2C). The
devices are available for specific detection voltage is 1.4
V, 1.6 V, 2.0 V, 2.6 V to 3.1 V (0.1 V step).
◼ Detection Voltage: 1.4 V, 1.6 V, 2.0 V, 2.6 V, 2.7 V
2.8 V, 2.9 V, 3.0 V, 3.1 V(Typ)
◼ Ultra-Low Current Consumption:
270 nA (Typ)
◼ Time Delay Accuracy:
±50 % (-40 °C to +125 °C,
CT pin capacitor ≥ 1 nF)
Special Characteristics
The time delay has ±50 % accuracy in the overall
operating temperature range of -40 °C to 125 °C.
◼ Detection Voltage Accuracy:
±3.0 %±12 mV (VDET=1.4 V, 1.6 V)
±2.5 %(VDET=2.0 V, 2.6 V to 3.1 V)
Features
◼ AEC-Q100 Qualified (Note 1)
◼ Nano Energy™
Package
SSON004R1010:
W(Typ) x D(Typ) x H(Max)
1.00 mm x 1.00 mm x 0.60 mm
◼ Delay Time Setting Controlled by External Capacitor
◼ Two output types (Nch open drain and CMOS
output)
◼ Miniature Surface-mount Package
(Note 1) Grade 1
Application
All automotive devices that requires voltage detection
Typical Application Circuit
VDD1
VDD2
VDD1
RL
Microcontroller
RST
Microcontroller
CVDD
CVDD
BD52xxNVX-2C
BD5320NVX-2C
RST
CCT
(Noise-reduction
Capacitor)
CCT
(Noise-reduction
Capacitor)
CL
CL
GND
GND
Figure 1. Open Drain Output Type
Figure 2. CMOS Output Type
BD52xxNVX-2C Series
BD5320NVX-2C
Pin Configuration
Pin Description
SSON004R1010
SSON004R1010
PIN No. PIN NAME
VOUT
CT
4
VOUT
3
CT
4
Function
GND
3
1
2
3
GND
VDD
VOUT
Pin 1 Mark
Power supply voltage
Output pin
EXP-PAD
Capacitor connection pin for
output delay time setting
Same potential with substrate
voltage (VDD), it is
recommended to connect to
VDD or can be left open
4
CT
2
VDD
1
GND
2
VDD
1
GND
-
EXP-PAD
BOTTOM VIEW
TOP VIEW
Nano Energy™ is a trademark or a registered trademark of ROHM Co., Ltd.
〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
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