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BD521VNVX-2C (开发中) PDF预览

BD521VNVX-2C (开发中)

更新时间: 2023-09-03 20:34:38
品牌 Logo 应用领域
罗姆 - ROHM 电容器
页数 文件大小 规格书
21页 1441K
描述
ROHM可灵活设置延迟时间的CMOS电压检测器IC系列是采用CMOS工艺的、内置高精度低耗电量延迟电路的CMOS复位IC系列产品,延迟时间可通过外置电容器进行设置。其检测电压为0.965V,支持Nch开漏输出。在从-40℃到125℃的整个工作温度范围内,将延迟时间精度控制在±50%以内。

BD521VNVX-2C (开发中) 数据手册

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Datasheet  
Voltage Detector (Reset) IC Series for Automotive Application  
Free Time Delay Setting  
CMOS Voltage Detector (Reset) IC  
BD521VNVX-2C  
General Description  
Key Specifications  
ROHM's Free Time Delay Setting CMOS Voltage  
Detector ICs are highly accurate, with ultra-low current  
consumption feature that uses CMOS process. Delay  
time setting can be control by an external capacitor. The  
lineup includes N-channel open drain output with  
detection voltage of 0.965 V.  
Detection Voltage:  
Ultra-Low Current Consumption:  
Time Delay Accuracy:  
0.965 V (Typ)  
270 nA (Typ)  
±50 % (-40 °C to +125 °C,  
CT pin capacitor ≥ 1 nF)  
The time delay has ±50 % accuracy in the overall  
operating temperature range of -40 °C to 125 °C.  
Special Characteristics  
Detection Voltage Accuracy:  
±3.0 %±12 mV (VDET = 0.965 V)  
Features  
Nano Energy™  
Package  
SSON004R1010:  
W (Typ) x D (Typ) x H (Max)  
1.0 mm x 1.0 mm x 0.6 mm  
AEC-Q100 Qualified(Note 1)  
Delay Time Setting Controlled by External Capacitor  
Nch Open Drain Output Type  
Miniature Surface-mount Package  
(Note 1) Grade 1  
Application  
All automotive devices that requires voltage detection  
Typical Application Circuit  
VDD1  
VDD2  
RL  
Microcontroller  
RST  
CVDD  
BD521VNVX-2C  
CCT  
(Noise-reduction  
Capacitor)  
CL  
GND  
Figure 1. Open Drain Output Type  
BD521VNVX-2C  
Pin Configuration  
Pin Description  
SSON004R1010  
SSON004R1010  
PIN No. PIN NAME  
VOUT  
3
CT  
4
VOUT  
3
CT  
4
Function  
GND  
1
2
3
GND  
VDD  
VOUT  
Pin 1 Mark  
Power supply voltage  
Output pin  
EXP-PAD  
Capacitor connection pin for  
output delay time setting  
Leave it open  
4
CT  
-
EXP-PAD  
2
VDD  
1
GND  
2
VDD  
1
GND  
BOTTOM VIEW  
TOP VIEW  
Nano Energy™ is a trademark or a registered trademark of ROHM Co., Ltd.  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
www.rohm.com  
© 2022 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 14 • 001  
TSZ02201-0GAG2G600140-1-2  
25.Apr.2022 Rev.001  
1/18  

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