BCX58IX

更新时间： 2024-02-07 18:35:38

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	147K
描述
NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)

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数据手册

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BCX58IX 数据手册

NPN Silicon AF Transistors

BCX 58

BCX 59

● High current gain

● Low collector-emitter saturation voltage

● Complementary types: BCX 78, BCX 79 (PNP)

Package¹⁾

Type

Marking

Ordering Code

Pin Configuration

BCX 58 VIII

BCX 58 IX

BCX 58 X

BCX 59 VIII

BCX 59 IX

BCX 59 X

–

Q62702-C619

Q62702-C620

Q62702-C621

Q62702-C623

Q62702-C624

Q62702-C625

TO-92

Maximum Ratings

Parameter

Symbol

Values

Unit

BCX 58

BCX 59

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CE0

CB0

EB0

100

200

500

150

Peak collector current

Peak base current

Total power dissipation, T

= 70 ˚C Ptot

˚C

Junction temperature

Storage temperature range

stg

– 65 … + 150

Thermal Resistance

Junction - ambient

th JA

th JC

≤ 250

≤ 160

K/W

Junction - case²⁾

For detailed information see chapter Package Outlines.

Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

5.91

Semiconductor Group

12 3 4 5 6

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BCX58VIII	INFINEON	获取价格	NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
BCX58X	INFINEON	获取价格	NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
BCX59	INFINEON	获取价格	NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
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