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BCW66TRLEADFREE PDF预览

BCW66TRLEADFREE

更新时间: 2024-01-26 05:56:31
品牌 Logo 应用领域
CENTRAL 晶体晶体管开关光电二极管IOT
页数 文件大小 规格书
2页 323K
描述
Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon,

BCW66TRLEADFREE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantHTS代码:8541.21.00.95
风险等级:5.01Is Samacsys:N
基于收集器的最大容量:6 pF集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN (315)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):170 MHz
VCEsat-Max:0.7 VBase Number Matches:1

BCW66TRLEADFREE 数据手册

 浏览型号BCW66TRLEADFREE的Datasheet PDF文件第2页 
BCW65 SERIES  
BCW66 SERIES  
www.centralsemi.com  
SURFACE MOUNT  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BCW65 and  
BCW66 Series types are NPN Silicon Transistors  
manufactured by the epitaxial planar process, epoxy  
molded in a surface mount package, designed for  
general purpose switching and amplifier applications.  
MARKING CODE: SEE MARKING CODE TABLE  
ON FOLLOWING PAGE  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
BCW65  
60  
32  
BCW66  
75  
45  
UNITS  
V
V
V
mA  
A
mA  
mA  
mW  
°C  
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Peak Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
V
V
V
CBO  
CEO  
EBO  
5.0  
800  
1.0  
100  
200  
I
C
I
CM  
I
B
I
BM  
P
350  
D
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
µA  
nA  
V
V
V
V
V
V
V
V
V
MHz  
pF  
pF  
I
I
I
V
V
V
=Rated V  
= Rated V  
=4.0V  
20  
20  
20  
CBO  
CBO  
EBO  
CB  
CB  
EB  
CEO  
CEO  
, T =150°C  
A
BV  
BV  
BV  
BV  
BV  
I =10µA (BCW65)  
60  
75  
32  
45  
5.0  
CBO  
CBO  
CEO  
CEO  
EBO  
C
I =10µA (BCW66)  
C
I =10mA (BCW65)  
C
I =10mA (BCW66)  
C
I =10µA  
E
V
V
V
V
I =100mA, I =10mA  
0.3  
0.7  
1.25  
2.0  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
B
B
B
I =500mA, I =50mA  
C
I =100mA, I =10mA  
C
I =500mA, I =50mA  
C
f
V
=5.0V, I =50mA, f=20MHz  
170  
6.0  
60  
T
c
e
CE  
CB  
EB  
C
E
C
C
V
V
=10V, I =0, f=1.0MHz  
=0.5V, I =0, f=1.0MHz  
C
BCW65A  
BCW66F  
BCW65C  
BCW66H  
MIN MAX  
80  
MIN  
MAX  
h
h
h
h
V
V
V
V
=10V, I =100µA  
35  
75  
100  
35  
FE  
FE  
FE  
FE  
CE  
CE  
CE  
CE  
C
=1.0V, I =10mA  
180  
C
=1.0V, I =100mA  
250  
250  
100  
630  
C
=2.0V, I =500mA  
C
R2 (20-November 2009)  

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