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BCW66GLT1G PDF预览

BCW66GLT1G

更新时间: 2024-02-25 16:28:34
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管PC
页数 文件大小 规格书
3页 107K
描述
General Purpose Transistor NPN Silicon

BCW66GLT1G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.01
Is Samacsys:N最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:NOT SPECIFIED元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:COMMERCIAL表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
最大关闭时间(toff):400 ns最大开启时间(吨):100 ns
Base Number Matches:1

BCW66GLT1G 数据手册

 浏览型号BCW66GLT1G的Datasheet PDF文件第2页浏览型号BCW66GLT1G的Datasheet PDF文件第3页 
BCW66GLT1G  
General Purpose Transistor  
NPN Silicon  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
http://onsemi.com  
Compliant  
COLLECTOR  
3
1
BASE  
MAXIMUM RATINGS  
2
Rating  
Symbol  
Value  
45  
Unit  
Vdc  
EMITTER  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
75  
Vdc  
3
V
EBO  
5.0  
Vdc  
SOT23  
CASE 318  
STYLE 6  
Collector Current Continuous  
I
800  
mAdc  
1
C
2
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to  
stresses above the Recommended Operating Conditions may affect device  
reliability.  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
EG MG  
Characteristic  
Symbol  
Max  
Unit  
G
Total Device Dissipation FR5 Board  
P
D
225  
mW  
(Note 1), T = 25°C  
Derate above 25°C  
A
1.8  
mW/°C  
°C/W  
EG  
M
G
= Specific Device Code  
= Date Code*  
= PbFree Package  
Thermal Resistance,  
JunctiontoAmbient  
R
q
JA  
556  
(Note: Microdot may be in either location)  
Total Device Dissipation Alumina  
P
D
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Substrate, (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance,  
JunctiontoAmbient  
ORDERING INFORMATION  
R
417  
°C/W  
°C  
q
JA  
Device  
Package  
Shipping  
Junction and Storage Temperature  
T , T  
J
55 to +150  
stg  
BCW66GLT1G  
SOT23  
(PbFree)  
3000 / Tape & Reel  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.  
BCW66GLT3G  
SOT23  
10000 / Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 3  
BCW66GLT1/D  
 

BCW66GLT1G 替代型号

型号 品牌 替代类型 描述 数据表
BCW66GLT1 ONSEMI

完全替代

NPN 双极晶体管
SBCW66GLT1G ONSEMI

类似代替

NPN 双极晶体管
BC817-16 DIODES

功能相似

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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