BCR5AS-12A
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
V
Test conditions
Tj = 125°C, VDRM applied
VTM
—
—
1.8
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
Gate trigger voltageNote2
I
II
III
I
VFGT
—
—
—
—
—
—
0.2
—
5
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
30
30
—
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
I
VRGT
I
VRGT
V
III
Gate trigger currentNote2
IFGT
mA
mA
mA
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
I
II
III
IRGT
I
IRGT
III
Gate non-trigger voltage
Thermal resistance
VGD
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125°C
Rth(j-c)
3.0
—
°C/W
V/µs
Critical-rate of rise of off-state
commutating voltageNote4
(dv/dt)c
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –2.5 A/ms
(di/dt)c
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
REJ03G0289-0400 Rev.4.00 Dec 19, 2008
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