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BCR2PM-14LE-AS#B00 PDF预览

BCR2PM-14LE-AS#B00

更新时间: 2024-01-28 06:13:50
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网三端双向交流开关栅极
页数 文件大小 规格书
7页 82K
描述
800V, 2A, TRIAC, TO-220AB, SC-67, TO-220F(2), 3 PIN

BCR2PM-14LE-AS#B00 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.84外壳连接:ISOLATED
配置:SINGLE换向电压的临界上升率-最小值:0.5 V/us
最大直流栅极触发电流:10 mA最大直流栅极触发电压:2 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大均方根通态电流:2 A断态重复峰值电压:800 V
子类别:TRIACs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:TRIAC
Base Number Matches:1

BCR2PM-14LE-AS#B00 数据手册

 浏览型号BCR2PM-14LE-AS#B00的Datasheet PDF文件第1页浏览型号BCR2PM-14LE-AS#B00的Datasheet PDF文件第3页浏览型号BCR2PM-14LE-AS#B00的Datasheet PDF文件第4页浏览型号BCR2PM-14LE-AS#B00的Datasheet PDF文件第5页浏览型号BCR2PM-14LE-AS#B00的Datasheet PDF文件第6页浏览型号BCR2PM-14LE-AS#B00的Datasheet PDF文件第7页 
BCR2PM-14LE  
Preliminary  
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
Surge on-state current  
I2t for fusing  
IT (RMS)  
2
A
Commercial frequency, sine full wave  
360° conduction  
ITSM  
I2t  
10  
A
60 Hz sinewave 1 full cycle, peak value,  
non-repetitive  
0.41  
A2s  
Value corresponding to 1 cycle of half  
wave 60 Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
1
W
W
V
0.1  
6
1
Peak gate current  
A
Junction temperature  
Storage temperature  
Mass  
Tj  
– 40 to +150  
– 40 to +150  
2.0  
C  
C  
g
Tstg  
Typical value  
Notes: 1. Gate open.  
Electrical Characteristics  
Parameter  
Repetitive peak off-state current  
On-state voltage  
Symbol  
IDRM  
Min.  
Typ.  
Max.  
Unit  
Test conditions  
1.0  
2.1  
mA  
V
Tj = 150C, VDRM applied  
VTM  
Tj = 25C, ITM = 3 A,  
Instantaneous measurement  
Gate trigger voltage Note2  
  
  
VFGT  
2.0  
2.0  
2.0  
10  
V
V
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
VRGT  
VRGT  
V
  
Gate trigger current Note2  
IFGT  
mA  
mA  
mA  
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
  
  
IRGT  
10  
IRGT  
10  
  
Gate non-trigger voltage  
Thermal resistance  
VGD  
0.1  
V
Tj = 150C, VD = 1/2 VDRM  
Rth (j-a)  
45  
C/W Junction to ambient,  
Natural convection  
Critical-rate of rise of off-state  
commutation voltage Note3  
(dv/dt)c  
0.5  
V/s  
Tj = 125C  
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.  
3. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.  
Test conditions  
Commutating voltage and current waveforms  
(inductive load)  
1. Junction temperature  
Time  
Supply Voltage  
Tj = 125C  
(di/dt)c  
2. Rate of decay of on-state commutating current  
(di/dt)c = –1.0 A/ms  
Time  
Main Current  
Main Voltage  
Time  
3. Peak off-state voltage  
VD = 400 V  
(dv/dt)c  
V
D
R07DS0233EJ0100 Rev.1.00  
Jan 05, 2011  
Page 2 of 6  

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