Datasheet > BCR12CM-16LHB00

BCR12CM-16LHB00

更新时间： 2022-10-15 10:05:12

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	93K
描述
Triac Medium Power Use The Product guaranteed maximum junction temperature 150?C

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数据手册

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BCR12CM-16LHB00 数据手册

BCR12CM-16LH

Preliminary

Performance Curve

Maximum On-State Characteristics

Rated Surge On-State Current

10²

10¹

10⁰

200

160

120

Tj = 25°C

10⁻¹

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

10⁰

10¹

10²

On-State Voltage (V)

Conduction Time (Cycles at 60Hz)

Gate Trigger Current vs.

Junction Temperature

Gate Characteristics (I, II and III)

10²

10¹

10³

10²

10¹

Typical Example

G(AV) = 0.5W

V_GM= 10V

P_GM= 5W

I_GM= 2A

GT = 1.5V

FGT I

10⁰

RGT III

I_GT= 50mA

RGT I

I_GTitem1 = 35mA

V_GD= 0.1V

V_D= 6V

R_L= 6Ω

10⁻¹

10²

10¹

10³

10⁴

–40

120

160

Gate Current (mA)

Junction Temperature (°C)

Gate Trigger Voltage vs.

Junction Temperature

Maximum Transient Thermal Impedance

Characteristics (Junction to case)

10²

10³

10⁴

10³

10²

10¹

2.4

Typical Example

2.0

1.6

1.2

0.8

0.4

V_D= 6V

R_L= 6Ω

10⁻¹

10⁰

10¹

10²

–40

120

160

Junction Temperature (°C)

Conduction Time (Cycles at 60Hz)

R07DS0261EJ0100 Rev.1.00

Mar 09, 2011

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