Datasheet > BCR12CM-16LHB00

BCR12CM-16LHB00

更新时间： 2022-10-15 10:05:12

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	93K
描述
Triac Medium Power Use The Product guaranteed maximum junction temperature 150?C

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BCR12CM-16LHB00 数据手册

BCR12CM-16LH

Preliminary

Electrical Characteristics

BCR12CM-16LH-1

BCR12CM-16LH

(I_GTitem: 1)

Parameter

Symbol

Unit

Test conditions

Min.

Typ. Max. Min. Typ. Max.

Tj = 150C

Repetitive peak off-state current

On-state voltage

I_DRM

V_TM

—

2.0

1.5

—

2.0

1.5

V_DRMapplied

Tc = 25C, I_TM= 20 A

instantaneous

—

measurement

Gate trigger voltage^Note2

Gate trigger curent^Note2









—

1.5

—

1.5

Tj = 25C, V_D= 6 V

R_L= 6 , R_G= 330 

Tj = 25C, V_D= 6 V

R_L= 6 , R_G= 330 





Tj = 125C

V_D= 1/2 V_DRM

Gate non-trigger voltage

V_GD

0.2

—

0.2

—

Tj = 150C

0.1

—

0.1

—

V_D= 1/2 V_DRM

Junction to case^Note3,4

Thermal resistance

R_{th (j-c)}

—

1.8

—

1.8 C/W

Tj = 125C

A/ms

Critical-rate of decay of on-state (di/dt)c

commutating current ^Note5

—

(dv/dt)c < 100 V/s

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T₂tab 1.5 mm apart from the molded case.

4. The contact thermal resistance R_{th (c-f)}in case of greasing is 1.0C/W.

5. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125C

2. Peak off-state voltage

V_D= 400 V

(di/dt)c

Time

Main Current

Main Voltage

Time

2. Rate of rise of off-state commutating voltage

(dv/dt)c < 100 V/s

(dv/dt)c

R07DS0261EJ0100 Rev.1.00

Mar 09, 2011

Page 2 of 7

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