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BCR08AM-14A#B00 PDF预览

BCR08AM-14A#B00

更新时间: 2024-01-19 15:25:14
品牌 Logo 应用领域
瑞萨 - RENESAS 三端双向交流开关栅极
页数 文件大小 规格书
8页 449K
描述
700V - 0.8A - Triac Low Power Use

BCR08AM-14A#B00 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-92*包装说明:,
针数:3Reach Compliance Code:compliant
风险等级:5.71Is Samacsys:N
换向电压的临界上升率-最小值:0.5 V/us最大直流栅极触发电流:5 mA
最大直流栅极触发电压:2 V最大漏电流:1 mA
最高工作温度:125 °C最低工作温度:-40 °C
最大均方根通态电流:0.8 A断态重复峰值电压:700 V
子类别:TRIACs表面贴装:NO
触发设备类型:TRIACBase Number Matches:1

BCR08AM-14A#B00 数据手册

 浏览型号BCR08AM-14A#B00的Datasheet PDF文件第1页浏览型号BCR08AM-14A#B00的Datasheet PDF文件第3页浏览型号BCR08AM-14A#B00的Datasheet PDF文件第4页浏览型号BCR08AM-14A#B00的Datasheet PDF文件第5页浏览型号BCR08AM-14A#B00的Datasheet PDF文件第6页浏览型号BCR08AM-14A#B00的Datasheet PDF文件第7页 
BCR08AM-14A  
Data Sheet  
Electrical Characteristics  
Parameter  
Repetitive peak off-state current  
On-state voltage  
Symbol  
IDRM  
Min.  
Typ.  
Max.  
1.0  
Unit  
mA  
V
Test conditions  
Tj = 125C, VDRM applied  
VTM  
2.0  
Tc = 25C, ITM = 1.2 A,  
instantaneous measurement  
Gate trigger voltage Note2  
VFGT  
VRGT  
2.0  
2.0  
2.0  
5
V
V
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
  
 VRGT  
V
Gate trigger current Note2  
IFGT  
IRGT  
mA  
mA  
mA  
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
  
5
  
IRGT  
5
Gate non-trigger voltage  
Thermal resistance  
VGD  
0.1  
50  
V
Tj = 125C, VD = 1/2 VDRM  
Junction to case Note3  
Tj = 125C  
Rth (j-c)  
(dv/dt)c  
C/W  
V/s  
Critical-rate of rise of off-state  
commutating voltage Note4  
0.5  
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.  
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.  
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
Commutating voltage and current waveforms  
Test conditions  
(inductive load)  
1. Junction temperature  
Time  
Supply Voltage  
Tj = 125°C  
(di/dt)c  
2. Rate of decay of on-state commutating current  
(di/dt)c = 0.4 A/ms  
Time  
Main Current  
Main Voltage  
Time  
3. Peak off-state voltage  
VD = 400 V  
(dv/dt)c  
V
D
R07DS1226EJ0500 Rev.5.00  
Sept. 10, 2019  
Page 2 of 7  

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