Datasheet > BC849CW/T4

BC849CW/T4

更新时间： 2022-12-01 19:27:22

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
7页	134K
描述
TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal

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BC849CW/T4 数据手册

NXP Semiconductors

Product data sheet

NPN general purpose transistors

BC849W; BC850W

FEATURES

PINNING

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

DESCRIPTION

base

emitter

collector

APPLICATIONS

• Low noise stages in tape recorders, hi-fi amplifiers and

other audio-frequency equipment.

DESCRIPTION

handbook, halfpage

NPN transistor in a SOT323 plastic package.

PNP complements: BC859W and BC860W.

MARKING

TYPE

NUMBER

MARKING

CODE⁽¹⁾

TYPE

NUMBER

MARKING

CODE⁽¹⁾

BC849BW

BC849CW

2B∗

2C∗

BC850BW

BC850CW

2F∗

Top view

MAM062

2G∗

Note

1. ∗ = - : Made in Hong Kong.

∗ = t : Made in Malaysia.

Fig.1 Simplified outline (SOT323) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

open emitter

MIN.

MAX.

UNIT

V_CBO

collector-base voltage

BC849W

−

BC850W

V_CEO

collector-emitter voltage

BC849W

open base

−

BC850W

V_EBO

I_C

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

open collector

100

200

+150

150

+150

°C

I_CM

I_BM

P_tot

T_stg

T_j

T_amb≤ 25 °C; note 1

−65

−

°C

T_amb

−65

°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 12

123 4 5 6 7

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