Datasheet > BC848W

BC848W

更新时间： 2024-06-27 12:13:28

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	591K
描述
SOT-323

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中文翻译

获取价格

数据手册

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BC848W 数据手册

BC848W

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to BC858W

 Excellent h_FELinearity

 High Collector Current

 Surface Mount device

SOT-323

MECHANICAL DATA



Case: SOT-323

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

100

°C/W

°C

150

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

833

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =10uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

，

V(BR)CEO

V(BR)EBO

I_CBO

I_C=10mA，I_B=0

I_E=1uA，I_C=0

nA V_CB=30V, I_E=0

V_CE=5V, I_C=10uA

V_CE=5V, I_C=2mA

270

DC current gain

h_FE

110

800

0.25

0.6

I_C=10mA，I_B=0.5mA

I_C=100mA，I_B=5mA

I_C=10mA，I_B=0.5mA

I_C=100mA，I_B=5mA

V_CE=5V, I_C=2mA

V_CE=5V, I_C=10mA

V_CE=5V,I_C=10mA,f=100

V_CB=10V, f=1

MHz

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE(sat)

V_BE(ON)

0.7

0.9

0.7

0.77

MHz

0.58 0.66

100

Transition frequency

Collector output capacitance

f_T

C_ob

MHz

V_CE=5V, I_C=0.2mA,R_S=2kΩ

Noise figure

f=1K

MHz,BW=200Hz

CLASSIFICATION OF h_FE

Rank

Range

Marking

BC848AW

120-200

BC848BW

200-450

BC848CW

420-800

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