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BC556

更新时间: 2024-01-02 06:40:07
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页数 文件大小 规格书
3页 308K
描述
Elektronische Bauelemente

BC556 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92最大集电极电流 (IC):0.1 A
配置:SingleJESD-609代码:e0
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.5 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):150 MHzBase Number Matches:1

BC556 数据手册

 浏览型号BC556的Datasheet PDF文件第2页浏览型号BC556的Datasheet PDF文件第3页 
BC556, B, C  
BC557, A, B, C  
BC558, A, B, C  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
TO-92  
PNP Transistor  
FEATURES  
Power dissipation  
PCM:  
Collector current  
ICM:  
0.625  
- 0.1  
-80  
W (Tamb=25)  
A
1
Collector-base voltage  
2
3
VCBO  
:
BC556  
BC557  
BC558  
V
V
V
-50  
-30  
1
2 3  
Operating and storage junction temperature range  
1. COLLECTOR  
2. BASE  
TJ, Tstg: -55to +150℃  
.
EMITTER  
3
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
-80  
-50  
-30  
-65  
-45  
-30  
VCBO  
Ic= -100µA , IE=0  
V
VCEO = -2mA, IB=0  
V
V
Emitter-base breakdown voltage  
Collector cut-off current  
VEBO  
IE= -100µA, IC=0  
VCB= -70V, IE=0  
-6  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
-0.1  
ICBO  
V
CB= -45 V, IE=0  
CB= -25V, IE=0  
VCE= -60 V, IB=0  
µA  
V
Collector cut-off current  
ICEO  
V
CE= -40 V, IB=0  
CE= -25 V, IB=0  
-0.1  
-0.1  
µA  
µA  
V
Emitter cut-off current  
DC current gain  
IEBO  
VEB= -5V, IC=0  
BC556  
BC557  
BC558  
120  
120  
120  
120  
180  
420  
500  
800  
800  
220  
460  
800  
hFE(1)  
VCE=-5V, IC= -2mA  
BC557A/558A  
BC556B/BC557B/BC558B  
BC556C/BC557C/BC558C  
Collector-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
I C=-100 mA, IB= -5mA  
I C= -100 mA, IB=-5mA  
-0.3  
-1  
V
V
Base-emitter saturation voltage  
Transition frequency  
VCE= -5V, IC= -10mA  
150  
MHz  
f T  
f = 100MHz  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 3  

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