Datasheet > BAV70/T1

BAV70/T1

更新时间： 2022-01-19 03:17:00

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
12页	64K
描述
DIODE KLEINSIGNAL SMD

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BAV70/T1 数据手册

Philips Semiconductors

Product speciﬁcation

High-speed double diode

BAV70

FEATURES

DESCRIPTION

PINNING

• Small plastic SMD package

The BAV70 consists of two

high-speed switching diodes with

common cathodes, fabricated in

planar technology, and encapsulated

in the small SOT23 plastic SMD

package.

DESCRIPTION

• High switching speed: max. 4 ns

anode (a1)

• Continuous reverse voltage:

max. 70 V

anode (a2)

common cathode

• Repetitive peak reverse voltage:

max. 75 V

• Repetitive peak forward current:

max. 450 mA.

handbook, halfpage

APPLICATIONS

• High-speed switching in thick and

thin-film circuits.

Top view

MAM383

Marking code: A4p = made in Hong Kong. A4t = made in Malaysia.

Fig.1 Simplified outline (SOT23) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

Per diode

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_RRM

V_R

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

−

I_F

single diode loaded; note 1;

see Fig.2

215

double diode loaded; note 1;

see Fig.2

−

125

450

I_FRM

I_FSM

repetitive peak forward current

non-repetitive peak forward current square wave; T_j= 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 1 ms

t = 1 s

−

0.5

250

+150

150

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

T_amb= 25 °C; note 1

°C

−65

−

Note

1. Device mounted on an FR4 printed-circuit board.

1999 May 05

123 4 5 6 7...12

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