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BAT754

更新时间: 2023-09-03 20:30:33
品牌 Logo 应用领域
安世 - NEXPERIA PC光电二极管
页数 文件大小 规格书
10页 2094K
描述
Schottky barrier diodesProduction

BAT754 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.27配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:2
端子数量:3最高工作温度:125 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:30 V表面贴装:YES
技术:SCHOTTKY端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

BAT754 数据手册

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BAT754 series  
Nexperia  
Schottky barrier diodes  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Per diode  
VR  
Parameter  
Conditions  
Min  
Max  
Unit  
reverse voltage  
forward current  
-
-
30  
V
IF  
200  
300  
mA  
mA  
IFRM  
repetitive peak forward  
current  
tp 1 s;   0.5  
[1]  
IFSM  
non-repetitive peak  
forward current  
sine wave;  
tp < 8.3 ms  
-
600  
mA  
Per device; one diode loaded  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
125  
C  
C  
C  
Tamb  
Tstg  
55  
65  
+125  
+150  
[1] Tj = 25 C before surge.  
6. Thermal characteristics  
Table 6.  
Symbol  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
Per device; one diode loaded  
Rth(j-a) thermal resistance from  
junction to ambient  
[1]  
in free air  
-
-
500  
K/W  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
7. Characteristics  
Table 7.  
Characteristics  
Tamb = 25 C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ  
Max Unit  
[1]  
VF  
forward voltage  
IF = 0.1 mA  
IF = 1 mA  
-
-
-
-
-
-
-
-
200  
260  
340  
420  
-
mV  
mV  
mV  
mV  
mV  
A  
-
IF = 10 mA  
-
IF = 30 mA  
-
IF = 100 mA  
VR = 25 V  
600  
[1]  
IR  
reverse current  
-
-
2
Cd  
diode capacitance  
f = 1 MHz; VR = 1 V  
10  
pF  
[1] Pulse test: tp 300 s;   0.02.  
BAT754_SER  
All information provided in this document is subject to legal disclaimers.  
© Nexperia B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 9 October 2012  
3 of 10  

BAT754 替代型号

型号 品牌 替代类型 描述 数据表
BAT754,215 NXP

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BAT754A NXP

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