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BAS40WT-06-TP PDF预览

BAS40WT-06-TP

更新时间: 2024-01-02 19:30:12
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 211K
描述
Rectifier Diode, 2 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

BAS40WT-06-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.39配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.38 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:3
最高工作温度:150 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:40 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAS40WT-06-TP 数据手册

 浏览型号BAS40WT-06-TP的Datasheet PDF文件第2页浏览型号BAS40WT-06-TP的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
BAS40WT/-04/-05/-06  
Micro Commercial Components  
Features  
xꢀ Pow Dissipation PD=200mW Tamb=25к  
xꢀ Forward Current IF=200mA  
xꢀ Breakdown Voltage VBR=40V  
200mW 40Volt  
Plastic-Encapsulate  
Diode  
·
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
Halogen free available upon request by adding suffix "-HF"  
Maximum Ratings  
SOT-323  
xꢀ Operating Temperature: -55к to +150к  
xꢀ Storage Temperature: -55к to +150к  
A
D
·
Epoxy meets UL 94 V-0 flammability rating  
·
Moisture Sensitivity Level 1  
C
B
Electrical Characteristics @ 25qC Unless Otherwise Specified  
Reverse Breakdown  
Voltage  
F
E
V(BR)R  
40V  
IR=10µA  
Maximum  
Instantaneous  
Forward Voltage  
H
G
J
380mV IFM = 1mA;  
1000mV IFM = 40mA;  
VF  
K
DIMENSIONS  
INCHES  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
MM  
IR  
1uA  
5pF  
5nS  
VR=30Volts  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.083  
MAX  
.087  
.053  
.096  
MIN  
1.80  
1.15  
2.10  
MAX  
2.20  
1.35  
2.45  
NOTE  
.026 Nominal  
0.65Nominal  
1.20  
.30  
.000  
.90  
.100  
.15  
Typical Junction  
Capacitance  
Measured at  
1.0MHz, VR=0V  
.047  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
CD  
F
.012  
.000  
.035  
.004  
.006  
G
H
J
IF=10mA through  
IR=10mA to  
IR=1mA  
K
Reverse Recovery  
Time  
Trr  
Suggested Solder  
Pad Layout  
0.70  
0.90  
1.90  
0.65  
0.65  
www.mccsemi.com  
1 of 3  
Revision: D  
2013/09/24  

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