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BAS40WX_11 PDF预览

BAS40WX_11

更新时间: 2024-11-28 08:48:27
品牌 Logo 应用领域
美微科 - MCC 肖特基二极管
页数 文件大小 规格书
2页 171K
描述
Surface Mount Schottky Barrier Diode 350mW

BAS40WX_11 数据手册

 浏览型号BAS40WX_11的Datasheet PDF文件第2页 
M C C  
TM  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
BAS40WX  
Micro Commercial Components  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
Surface Mount  
Schottky Barrier Diode  
Lead Free Finish/RoHS Compliant ("P" Suffix  
designates RoHS Compliant. See ordering information)  
Fast Switching Speed  
Low Turn-on Voltage  
350mW  
Surface Mount Package Ideally Suited for Automatic Insertion  
PN Junction Guard Ring for Transient and ESD Protection  
SOD-323  
Mechanical Data  
Marking: 43  
A
B
Polarity: Indicated by Cathode Band  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
C
E
Maximum Ratings @ 25oC Unless Otherwise Specified  
Characteristic  
Symbol  
VRRM  
Value  
Unit  
V
H
D
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRWM  
V
R  
40  
J
G
RMS Reverse Voltage  
Forward Continuous Current(Note1)  
Forward Surge Current @ t<1.0s  
Power Dissipation(Note 1)  
Thermal Resistance(Note 1)  
Operation Temp. Range  
VR(RMS)  
28  
200  
V
mA  
mA  
mW  
oC/W  
oC  
DIMENSIONS  
MM  
IFM  
IFSM  
Pd  
DIM  
INCHES  
NOTE  
600  
MIN  
MAX  
MIN  
2.30  
1.60  
1.15  
0.80  
0.25  
0.10  
0.10  
-----  
MAX  
2.70  
1.80  
1.35  
1.15  
0.40  
0.45  
0.25  
0.15  
350  
A
B
C
D
E
G
H
J
.090  
.063  
.045  
.031  
.010  
.004  
.004  
-----  
.107  
.071  
.053  
.045  
.016  
.018  
.010  
.006  
R
357  
Tj  
-55 to +125  
-65 to +150  
Storage Temp. Range  
Electrical Characteristics @ 25oC Unless Otherwise Specified  
oC  
TSTG  
Charateristic  
Symbol Min Typ Max Unit  
Test Cond.  
tp<300us IF=1.0mA  
tp<300us IF=40mA  
0.38  
1
Forward Voltage  
VF  
IR  
----- -----  
----- 20  
V
SUGGESTED SOLDER  
PAD LAYOUT  
Reverse Leakage  
Current  
Junction  
Capacitance  
0.074"  
tp<300us VR=30V  
VR=0V, f=1.0MHz  
200  
nA  
pF  
Cj  
-----  
4
5
5
0.027”  
IF=IR=10mA  
IR=1.0mA,  
RL=100OHM  
Reverse Recovery  
Time  
trr  
----- -----  
ns  
0.022”  
Notes: 1. Valid provided that terminals are kept at ambient temperature.  
www.mccsemi.com  
Revision:  
A
2011/01/01  
1 of 2  

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