Datasheet > B8RLRP

B8RLRP

更新时间： 2024-02-08 15:45:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	188K
描述
SENSITIVE GATE TRACS

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中文翻译

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技术参数
数据手册

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B8RLRP 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8536.69.40.40
风险等级：	5.81	其他特性：	TOP ENTRY
连接器类型：	BOARD CONNECTOR	联系完成配合：	TIN OVER COPPER
联系完成终止：	Tin (Sn)	触点性别：	MALE
触点材料：	BRASS	DIN 符合性：	NO
滤波功能：	NO	IEC 符合性：	NO
JESD-609代码：	e3	MIL 符合性：	NO
插接信息：	MULTIPLE MATING PARTS AVAILABLE	混合触点：	NO
安装方式：	STRAIGHT	安装类型：	BOARD
装载的行数：	1	选件：	GENERAL PURPOSE
端子节距：	3.96 mm	端接类型：	SOLDER
触点总数：	8	UL 易燃性代码：	94V-0
Base Number Matches：	1

B8RLRP 数据手册

Preferred Device

Silicon Bidirectional Thyristors

Designed for use in solid state relays, MPU interface, TTL logic and

any other light industrial or consumer application. Supplied in an

inexpensive TO–92 package which is readily adaptable for use in

automatic insertion equipment.

http://onsemi.com

• One–Piece, Injection–Molded Package

• Blocking Voltage to 600 Volts

TRIACS

• Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all

possible Combinations of Trigger Sources, and especially for Circuits

that Source Gate Drives

0.8 AMPERE RMS

400 thru 600 VOLTS

• All Diffused and Glassivated Junctions for Maximum Uniformity of

Parameters and Reliability

• Improved Noise Immunity (dv/dt Minimum of 20 V/µsec at 110°C)

• Commutating di/dt of 1.6 Amps/msec at 110°C

• High Surge Current of 8 Amps

MT2

MT1

• Device Marking: Device Type, e.g., for MAC997A6: MAC7A6, Date

Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off-State Voltage

Volts

DRM,

(1)

(T = –40 to +110°C)

RRM

Sine Wave 50 to 60 Hz, Gate Open

MAC997A6,B6

400

600

TO–92 (TO–226AA)

CASE 029

MAC997A8,B8

STYLE 12

On-State RMS Current

Full Cycle Sine Wave 50 to 60 Hz

0.8

Amp

T(RMS)

(T = +50°C)

PIN ASSIGNMENT

Peak Non–Repetitive Surge Current

One Full Cycle, Sine Wave 60 Hz

(T = 110°C)

8.0

Amps

Main Terminal 1

Gate

Main Terminal 2

TSM

I t

A s

Circuit Fusing Considerations (t = 8.3 ms)

.26

5.0

Peak Gate Voltage

Volts

Watts

Watt

Amp

°C

2.0 s, T = +80°C)

ORDERING INFORMATION

Peak Gate Power

5.0

0.1

1.0

Seedetailedorderingandshippinginformationinthepackage

dimensions section on page 8 of this data sheet.

(t 2.0 s, T = +80°C)

Average Gate Power

G(AV)

Preferred devices are recommended choices for future use

and best overall value.

(T = 80°C, t

8.3 ms)

Peak Gate Current

2.0 s, T = +80°C)

Operating Junction Temperature Range

–40 to

+110

Storage Temperature Range

stg

–40 to

+150

°C

(1) V

DRM

and V for all types can be applied on a continuous basis. Blocking

RRM

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

May, 2000 – Rev. 2

MAC997/D

12 3 4 5 6 7...12

中文翻译

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B8S	WTE	获取价格	0.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
B8S	CHENG-YI	获取价格	SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS
B8S	PANJIT	获取价格	MINI SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

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