Datasheet > B5A100VI_07

B5A100VI_07

更新时间： 2024-02-04 02:01:54

品牌	Logo	应用领域
KEC		二极管
页数	文件大小	规格书
2页	42K
描述
SCHOTTKY BARRIER TYPE DIODE

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中文翻译

获取价格

数据手册

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B5A100VI_07 数据手册

SEMICONDUCTOR

B5A100VI

SCHOTTKY BARRIER TYPE DIODE

TECHNICAL DATA

SWITCHING TYPE POWER SUPPLY APPLICATION.

CONVERTER & CHOPPER APPLICATION.

DIM MILLIMETERS

FEATURES

10.0+0.3

15.0+0.3

Average Output Rectified Current

: I_O=5A (Tc=115 ).

2.70 0.3

0.76+0.09/-0.05

Φ3.2 0.2

Repetitive Peak Reverse Voltage

: V_RRM=100V.

3.0+0.3

12.0 0.3

0.5+0.1/-0.05

13.6 0.5

Fast Reverse Recovery Time : t_rr=35ns.

Low Peak Forward Voltage : 0.73V(Typ.)

3.7 0.2

1.2+0.25/-0.1

1.5+0.25/-0.1

2.54+0.1

6.8 0.1

4.5 0.2

2.6+0.2

0.5 Typ

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_RRM

RATING

100

UNIT

1. CATHODE

2. NC

Repetitive Peak Reverse Voltage

Average Output Rectified

3. ANODE

I_O

Current (Tc=115

)

Peak One Cycle Surge Forward

Current (Non-Repetitive 60Hz)

TO-220IS

I_FSM

100

T_j

Junction Temperature

-40 150

-55 150

T_stg

Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Peak Forward Voltage

SYMBOL

V_FM

TEST CONDITION

I_FM=5A, Tc=25

MIN.

TYP.

MAX.

0.78

UNIT

0.73

I_RRM

V_RRM=Rated

Repetitive Peak Reverse Current

Reverse Recovery Time

Thermal Resistance

t_rr

I_F=1.0A, di/dt=-20A/ s

Juction to Case

R_th(j-c)

4.5

2007. 5. 21

Revision No : 2

1/2

中文翻译

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