Datasheet > B12V11400

B12V11400

更新时间： 2024-01-13 11:31:21

品牌	Logo	应用领域
其他 - ETC		晶体晶体管微波
页数	文件大小	规格书
7页	42K
描述
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

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B12V11400 数据手册

BIPOLARICS,INC.

Part Number B12V114

NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

PRODUCT DATA SHEET

FEATURES:

DESCRIPTION AND APPLICATIONS:

Bipolarics' B12V114 is a high performance silicon bipolar

transistor intended for use in low noise applications at VHF,

UHF and microwave frequencies. These applications include

narrowband and wideband amplifiers, oscillators and

micropower transmitters. Typical applications include cellu-

lar telephone preamplifiers/mixers, CATV amplifiers and

Part 15 receivers and transmitters. Commercial plastic, sur-

face mount and hermetic (including Stripline) packaging

options make this device very versatile; from consumer prod-

uct to space flight.

• High Gain Bandwidth Product

f = 10 GHz typ @ I_C= 25mA

• Low Noise Figure

1.4 dB typ at 1.0 GHz

1.7 dB typ at 2.0 GHz

• High Gain

|S₂₁| ²16.9 dB @ 1.0 GHz

Absolute Maximum Ratings:

12.0 dB @ 2.0 GHz

SYMBOL

PARAMETERS

RATING

UNITS

• Dice, Plastic, Hermetic and Surface

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Mount packages available

1.5

^oC

PERFORMANCE DATA:

• Electrical Characteristics (T_A= 25^oC)

(1)

Junction Temperature

Storage Temperature

200

T_STG

-65 to 150

(1) Depends on package

SYMBOL

PARAMETERS & CONDITIONS

_CE= 8V, I_C= 25 mA unless stated

UNIT

MIN.

TYP.

MAX.

Gain Bandwidth Product

Insertion Power Gain:

GHz

10.0

|S₂₁

f = 1.0 GHz

f = 2.0 GHz

16.9

12.0

Power output at 1dB compression:

Gain at 1dB compression:

f = 1.0 GHz

dBm

18.0

15.0

1dB

f = 1.0 GHz

1dB

Noise Figure: V_CE= 8V, I_C= 10mA

Forward Current Transfer Ratio:

f = 1.0 GHz

f = 1MHz

1.4

h_FE

150

300

_CE= 8V, I_C=25 mA

I_CBO

I_EBO

C_CB

Collector Cutoff Current : V_CB= 8V

Emitter Cutoff Current : V_EB= 1V

Collector Base Capacitance: V_CB= 8V

µA

0.2

1.0

f = 1MHz

0.25

12 3 4 5 6 7

中文翻译

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与B12V11400相关器件

型号	品牌	获取价格	描述	数据表
B12V11402	ETC	获取价格	NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
B12V11414	ETC	获取价格	NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
B12V11435	ETC	获取价格	NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
B12V11492	ETC	获取价格	NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
B13	DBLECTRO	获取价格	FEMALE HEADER PROFILE : 4.5mm STRAIGHT
B-13	TDK	获取价格	附件
B-13	KEMET	获取价格	KEMET, BEAD W, DC Line Filters, Normal Mode
B-13/14-1250C-T3-SSCA-G5	SOURCE	获取价格	Transceiver, 1260nm Min, 1360nm Max, 1250Mbps(Tx), 1250Mbps(Rx), SC Connector, Through Hol
B-13/14-1250C-T3-SSC-G5	SOURCE	获取价格	Transceiver, 1260nm Min, 1360nm Max, 1250Mbps(Tx), 1250Mbps(Rx), SC Connector, Through Hol
B-13/14-1250-T3-SSC2A	SOURCE	获取价格	Transceiver, 1260nm Min, 1360nm Max, 155Mbps(Tx), 155Mbps(Rx), SC Connector, Through Hole

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